Physical investigation of Au/Si/CuSbS₂/Au heterojunctions grown at various substrate temperatures using oblique angle incidence deposition

In this study, we investigate the photovoltaic properties of the Au/Si/CuSbS₂/Au junction thin films grown at different substrate temperatures using vacuum thermal evaporation. The GLAD technique was used to tilt the substrate at an angle of 60°. Our results show that increasing the substrate temperature increases the photovoltaic activity compared to films deposited at room temperature. The CuSbS₂ deposited at 150 °C showed the highest photovoltaic conversion efficiency(η) of 3.11%. These results highlight the potential of CuSbS₂ for photoconductive applications and open new avenues for further research in this field. Key diode parameters, including ideality factor (n), series resistance (Rs) and saturation current density (Js), were extracted from J-V measurements of (Au/Si/CAS-2/Au) structures fabricated at different substrate temperatures (RT, 150 °C and 200 °C). The analysis of J-V characteristics under 1000 W/m² illumination allowed the determination of key solar cell parameters, including short circuit current density (J_sc) of 1.21, 7.54, and 0.80 mA/cm², open circuit voltage (Voc) of 0.95, 1.33, and 0.58 V, fill factor(FF) of 0.32, 0.33, and 0.19, and solar conversion efficiency (η) of 0.37, 3.11, and 0.10% for different temperatures, respectively.