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Journal of Materials Science

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27-03-2019 | Energy materials

Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors

Authors: Tao Zhu, Shaobo Li, Bin Ren, Limei Zhang, Lichun Dong, Luxi Tan

Published in: Journal of Materials Science | Issue 13/2019

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Abstract

Boron and nitrogen co-doped reduced graphene oxide (BN-rGO) materials were prepared via a facile dielectric barrier discharge plasma treatment method. X-ray photoelectron spectroscopy results demonstrated that the boron content in the boron-doped rGO (B-rGO) and BN-rGO is 1.21 at.% and 1.41 at.%, while the nitrogen content in the nitrogen-doped rGO (N-rGO) and BN-rGO is 2.12 at.% and 2.69 at.%, respectively. The doping of heteroatoms significantly improves the capacitance of the as-synthesized materials, giving BN-rGO a highly enhanced capacitance of 350 F g⁻¹ at a current density of 0.5 A g⁻¹, which is 2.36, 1.46 and 1.21 times higher than that of rGO, B-rGO or N-rGO, respectively.

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Title: Plasma-induced synthesis of boron and nitrogen co-doped reduced graphene oxide for super-capacitors
Authors: Tao Zhu
Shaobo Li
Bin Ren
Limei Zhang
Lichun Dong
Luxi Tan
Publication date: 27-03-2019
Publisher: Springer US
Published in: Journal of Materials Science / Issue 13/2019
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-019-03552-2

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