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Journal of Computational Electronics

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04-05-2023

Polycrystalline silicon nanowire FET performance depending on density of states

Author: Fouad Demami

Published in: Journal of Computational Electronics | Issue 4/2023

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Abstract

Herein, we investigate the performance of thin film transistors based on polycrystalline silicon nanowires using the complementary metal–oxide–semiconductor spacer technique. A drain current model was developed based on the Poisson equation whose charge density includes the acceptor traps. The density of states (DOS) distribution was characterized by two exponentials modeling the tail and the deep states within the gap. A comprehensive analysis was conducted on the impact of the DOS parameters on the transfer characteristics. The results show that the deep states affect the current behavior in the subthreshold region, while the tail states affect the current above the threshold. For comparison, the model was fitted with the experimental data. The deep state density was high, which provides qualitative insight into the structure of polycrystalline silicon nanowires (poly-SiNWs). The results are in good agreement with the study of the conduction mechanism and the measurement of DOS for these nanowires.

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Title: Polycrystalline silicon nanowire FET performance depending on density of states
Author: Fouad Demami
Publication date: 04-05-2023
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 4/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02034-8

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Polycrystalline silicon nanowire FET performance depending on density of states

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Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

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