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Semiconductors
Published in: Semiconductors 9/2018

01-09-2018 | SURFACES, INTERFACES, AND THIN FILMS

Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

Authors: A. A. Shiryaev, V. M. Vorotyntsev, E. L. Shobolov

Published in: Semiconductors | Issue 9/2018

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Abstract

It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 109 cm–3 at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole–Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.
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Metadata
Title
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
Authors
A. A. Shiryaev
V. M. Vorotyntsev
E. L. Shobolov
Publication date
01-09-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 9/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618090166

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