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01-02-2025

Potential of gallium oxide as a radiation hard technology

Authors: Aamenah Siddiqui, Shahbaz Afzal, Muhammad Usman

Published in: Journal of Computational Electronics | Issue 1/2025

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Abstract

Gallium oxide (Ga2O3) is an emerging and promising candidate for high-power and radiation-rich environments, such as space, thanks to its ultra-wide bandgap (~ 4.9 eV) and high critical electrical field (~ 8 MV/cm). Radiation in space, such as protons, alpha particles and heavy ions, can cause serious damage to electronic devices and even lead to permanent damage. However, assessing these devices' reliability and radiation hardness in space-like environments is often expensive and complex. In the present work, we utilize a technology computer-aided design (TCAD) simulation-based framework that uses the concept of non-ionizing energy loss (NIEL) to evaluate the displacement damage in electronic devices under particle irradiation. To assess the radiation tolerance of Ga2O3 diodes, first, a TCAD model for Ga2O3 Schottky barrier diodes (SBD) is developed and calibrated/benchmarked to an experimental device, followed by irradiation simulations. The results show that Ga2O3 SBD can withstand a 5 MeV proton fluence of ~ 1015 cm−2 with no change in the forward current voltage (IV) characteristics. This value is significantly higher than that of 4H-SiC (~5 × 1013 cm−2) and Si (~1 × 1012) SBDs with the same ideal breakdown voltage - VBR (1600 V), demonstrating the potential of Ga2O3 as a radiation-hard technology.

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Literature
6.
go back to reference Boschini, M.J., Rancoita, P.G., Tacconi, M.: SR-NIEL—7 Calculator: Screened Relativistic (SR) Treatment for Calculating the Displacement Damage and Nuclear Stopping Powers for Electrons, Protons, Light- and Heavy- Ions in Materials (version 9.0); [Online] available at INFN sez. Milano-Bicocca, Italy [March, 2023] (2014) http://www.sr-niel.org/. Boschini, M.J., Rancoita, P.G., Tacconi, M.: SR-NIEL—7 Calculator: Screened Relativistic (SR) Treatment for Calculating the Displacement Damage and Nuclear Stopping Powers for Electrons, Protons, Light- and Heavy- Ions in Materials (version 9.0); [Online] available at INFN sez. Milano-Bicocca, Italy [March, 2023] (2014) http://​www.​sr-niel.​org/​.
20.
go back to reference Test Method Standard (Microcircuits) MIL-STD-883E. Department of Defense, USA, p. 641 (1996) Test Method Standard (Microcircuits) MIL-STD-883E. Department of Defense, USA, p. 641 (1996)
21.
go back to reference Test Method Standard MIL-STD-750F w/CHANGE 2. In: Test Methods for Semiconductor Devices. Department of Defense, USA, p. 641 (2016) Test Method Standard MIL-STD-750F w/CHANGE 2. In: Test Methods for Semiconductor Devices. Department of Defense, USA, p. 641 (2016)
24.
go back to reference Ziegler, J.F., Biersack, J.P.: The stopping and range of ions in matter. In: Bromley, D.A. (ed.) Treatise on Heavy-Ion Science: Volume 6: Astrophysics, Chemistry, and Condensed Matter, pp. 93–129. Springer, Boston, MA (1985)MATH Ziegler, J.F., Biersack, J.P.: The stopping and range of ions in matter. In: Bromley, D.A. (ed.) Treatise on Heavy-Ion Science: Volume 6: Astrophysics, Chemistry, and Condensed Matter, pp. 93–129. Springer, Boston, MA (1985)MATH
25.
go back to reference Silvaco. Silvaco International, Santa Clara, CA: ATLAS User's Manual (2016) Silvaco. Silvaco International, Santa Clara, CA: ATLAS User's Manual (2016)
31.
go back to reference Hölzl, J., Schulte, F.K.: Work function of metals. In: Solid Surface Physics, vol. 85. Springer, Berlin, pp. 1–150 (1979). Hölzl, J., Schulte, F.K.: Work function of metals. In: Solid Surface Physics, vol. 85. Springer, Berlin, pp. 1–150 (1979).
32.
39.
Metadata
Title
Potential of gallium oxide as a radiation hard technology
Authors
Aamenah Siddiqui
Shahbaz Afzal
Muhammad Usman
Publication date
01-02-2025
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2025
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02266-2