Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Start single access now
Request access for companies
EXTENDED SEARCH
Log in
Top

Hint

Swipe to navigate through the chapters of this book

Published in:
Significance of Ammonothermal Synthesis for Nitride Materials Read chapter Read first chapter

2021 | OriginalPaper | Chapter

16. Properties of Ammonothermal Crystals

Authors : Jaime A. Freitas Jr., Marcin Zając

Published in: Ammonothermal Synthesis and Crystal Growth of Nitrides

Publisher: Springer International Publishing

Log in

Abstract

This chapter summarizes the present status of bulk GaN crystals grown by ammonothermal basic and acidic methods, and reviews their intrinsic physical properties. Crystals with low dislocation densities, typically well below 105 cm−2, high crystal lattice flatness, and sharp X-ray rocking curves (typically below 20 arcsec) are reproducibly grown by both methods. High quality strain-free homoepitaxial films have been successfully deposited on both polar and non-polar ammonothermal substrates. Characteristics of testing devices produced using these epitaxial templates confirm the potential of ammonothermal substrates for fabrication of high performance and high yield devices.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
previous chapter Molecular Simulations as Guides to Ammonothermal Syntheses of Nitrides—State of the Art and Perspectives
next chapter Special Equipment for Ammonothermal Processes
Literature
1.
K. Byrappa, M. Yoshimura, Handbook of Hydrothermal Technology (Noyes Publications, Norwich, 2001)
2.
M. Zając, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, J.Z. Domagala, R. Piotrzkowski, E. Litwin-Staszewska, D. Wasik, M. Bockowski, Prog. Cryst. Growth Charact. Mater. 64, 63 (2018) CrossRef
3.
R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, J. Cryst. Growth 310, 3911 (2008) CrossRef
4.
R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, M. Rudzinski, M. Zajac, J. Cryst. Growth 311, 3058 (2009) CrossRef
5.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, W. Strupinski, J. Misiewicz, Phys. Status Solidi (A) 208, 1489 (2011) CrossRef
6.
Y. Mikawa, T. Ishinabe, S. Kawabata, T. Mochuzuki, A. Kojima, Y. Kagamitani, H. Fujisawa, Proc. SPIE 9363, 936302-1 (2015). R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, W. Strupinski, J. Misiewicz, Phys. Status Solidi (A) 208, 1489 (2011)
7.
D. Ehrentraut, R.T. Pakalapati, D.S. Kamber, W. Jiang, D.W. Pocius, B.C. Downey, M. McLaurin, M.P. D’Evelyn, Jpn. J. Appl. Phys. 52, 08JA01 (2013)
8.
W. Jiang, D. Ehrentraut, J. Cook, D.S. Kamber, R.T. Pakalapati, M.P. D’Evelyn, Phys. Status Solidi B 252, 1069 (2015)
9.
T. Malkowski, J.S. Speck, S.P. DenBaars, S. Nakamura, J. Cryst. Growth 499, 85 (2018) CrossRef
10.
R. Dwilinski, A. Wysmolek, J. Baranowski, M. Kaminska, R. Doradzinski, J. Garczynski, L. Sierzputowski, Acta Phys. Pol. 88(5), 833 (1995) CrossRef
11.
12.
A. Yoshikawa, E. Oshima, T. Fukuda, H. Tsuji, K. Oshima, J. Cryst. Growth 260, 67 (2004) CrossRef
13.
14.
T. Hashimoto, K. Fujito, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura, J. Cryst. Growth 275, e525 (2005) CrossRef
15.
T. Hashimoto, K. Fujito, R. Sharma, E.R. Letts, P.T. Fini, J.S. Speck, S. Nakamura, J. Cryst. Growth 291, 100 (2006) CrossRef
16.
M.P. D’Evelyn, H.C. Hong, D.-S. Park, H. Lu, E. Kaminsky, R.R. Melkote, P. Perlin, M. Leszczynski, S. Porowski, R.J. Molnar, J. Cryst. Growth 300, 11 (2007) CrossRef
17.
D. Bliss, B. Wang, M. Suscavage, R. Lancto, S. Swider, W. Eikenberry, C. Lynch, J. Cryst. Growth 312, 1069 (2010) CrossRef
18.
T. Hashimoto, E. Letts, M. Ikari, Y. Nojima, J. Cryst. Growth 312, 2503 (2010) CrossRef
19.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, J. Serafinczuk, W. Strupinski, J. Cryst. Growth 312, 2499 (2010) CrossRef
20.
K. Fujii, G. Fujimoto, T. Goto, T. Yao, Y. Kagamitani, N. Hoshino, D. Ehrentraut, T. Fukuda, J. Cryst. Growth 310, 896–899 (2008) CrossRef
21.
Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T. Fukuda, H. Tsuji, K. Oshima, Jpn. J. Appl. Phys. 45, 4018 (2006) CrossRef
22.
T. Hashimoto, S. Hoff, D. Key, K. Male, M. Michaels, J. Cryst. Growth 403, 3 (2014) CrossRef
23.
24.
S. Pimputkar, S. Kawabata, J.S. Speck, S. Nakamura, J. Cryst. Growth 403, 7 (2014) CrossRef
25.
26.
T.F. Malkowski, S. Pimputkar, J.S. Speck, S.P. DenBaars, S. Nakamura, J. Cryst. Growth 456, 21 (2016) CrossRef
27.
J. Hertrampf, N.S.A. Alt, E. Schlücker, M. Knetzger, E. Meissner, R. Niewa, J. Cryst. Growth 456, 2 (2016) CrossRef
28.
D. Tomida, Y. Kagamitani, Q. Bao, K. Hazu, H. Sawayama, S.F. Chichibu, C. Yokoyama, T. Fukuda, T. Ishiguro, J. Cryst. Growth 353, 59 (2012) CrossRef
29.
Q. Bao, M. Saito, K. Hazu, Y. Kagamitani, K. Kurimoto, D. Tomida, K. Qiao, T. Ishiguro, Ch. Yokoyama, S.F. Chichibu, J. Cryst. Growth 404, 168 (2014) CrossRef
30.
31.
M. Saito, D.S. Kamber, T.J. Baker, K. Fujito, S.P. DenBaars, J.S. Speck, S. Nakamura, Appl. Phys. Express 1, 121103 (2008) CrossRef
32.
R.G. Wyckoff, Crystal Structures, vol. 1 (Wiley, New York, 1995), pp. 111–113
33.
34.
35.
36.
M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski, J.M. Domagala, Appl. Phys. Lett. 69, 73 (1996) CrossRef
37.
N.A. Mahadik, S.B. Qadri, J.A. Freitas Jr., Cryst. Growth Des. 15, 291 (2014) CrossRef
38.
L. Bergman, M. Dutta, R.J. Nemanich, Raman Scattering in Materials Science, Springer Series in Materials Science, vol. 42, ed. by W.H. Weber, R. Merlin (2000), p. 273
39.
D. Gogova, P.P. Petrov, M. Buegler, M.R. Wagner, C. Nestiel, G. Callsen, M. Schmidbauert, R. Kucharski, M. Zajac, R. Dwilinski, M.R. Philips, A. Hoffmann, R. Fornari, J. Appl. Phys. 113, 203513 (2013) CrossRef
40.
P. Perlin, J. Camassel, W. Knap, T. Talercio, J.C. Chervin, T. Suski, I. Grzegory, S. Porowski, Appl. Phys. Lett. 67, 2524 (1995) CrossRef
41.
H.-Y. Kim, J.A. Freitas Jr., J. Kim, Electrochem. Solid State Lett. 14, H5 (2011) CrossRef
42.
J.A. Freitas Jr., J.C. Culbertson, N.A. Mahadik, M.J. Tadjer, S. Wu, B. Raghothamachar, M. Dudley, T. Sochacki, M. Bockowski, J. Cryst. Growth 500, 104 (2018) CrossRef
43.
M. Dudley, Encyclopedia of Advanced Materials, vol. 4 (Pergamon Press, NY, 1994), p. 2950
44.
M.J. Hordon, B.L. Averbach, Acta Metall. 9, 231 (1961)
45.
46.
R. Kucharski, K. Grabianska, A. Gwardys-Bak, M. Zajac, A. Puchalski, J.Z. Domagala, T. Sochacki, M. Bockowski, Presented at International Workshop on Nitride Semiconductors, Kanazawa, Japan, 11–16 Nov 2018
47.
48.
S. Sintonen, M. Rudzinski, S. Suihkonen, H. Jussila, M. Knetzger, E. Meissner, A. Danilewsky, T.O. Tuomi, H. Lipsanen, J. Appl. Phys. 116, 083504 (2014)
49.
T. Hashimoto, F. Wu, M. Saito, K. Fujitu, J.S. Speck, S. Nakamura, J. Cryst. Growth 310, 876 (2008) CrossRef
50.
J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, B.J. Shromme, L. Chen, P.J. Hartileb, M. Michaels, J.W. Kolis, Appl. Phys. Lett. 84, 17 (2004)
51.
K. Horibuchi, S. Yamaguchi, Y. Kimoto, K. Nishikawa, T. Kachi, Semicond. Sci. Technol. 31, 034002 (2016) CrossRef
52.
53.
P.U. Arifov, N.Y. Arutyunov, A.Z. Iliyasov, Sov. Phys. Semicond. 11, 907 (1977)
54.
55.
K. Saarinen, T. Laine, S. Kuisma, J. Nissila, P. Hautojarvi, L. Dobrzynski, J.M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, S. Porowski, Phys. Rev. Lett. 79, 3030 (1997) CrossRef
56.
K. Saarinen, in III-nitrides Semiconductors: Electrical, Structural and Defects Properties, ed. by O. Manasreh (Elsevier, Amsterdam, 2000), pp. 109–149
57.
58.
F. Tuomisto, T. Kuittinen, M. Zajac, R. Doradzinski, D. Wasik, J. Cryst. Growth 403, 114 (2014) CrossRef
59.
60.
S. Suihkonen, S. Pimputkar, J.S. Speck, S. Nakamura, Appl. Phys. Lett. 108, 202105 (2016) CrossRef
61.
A. Uedono, Y. Tsukada, Y. Mikawa, T. Mochizuki, H. Fujisawa, H. Ikeda, K. Kurihara, S. Terada, S. Ishibashi, S.F. Chichibu, J. Cryst. Growth 448, 117 (2016) CrossRef
62.
W. Jiang, M. Nolan, D. Ehrentraut, M.P. D’Evelyn, Appl. Phys. Express 10, 075506 (2017) CrossRef
63.
J.L. Lyons, A. Alkauskas, A. Janotti, C.G. Van de Walle, Phys. Status Solid 252, 900 (2015) CrossRef
64.
C. Persson, A.F. da Silva, Optoelectronic Devices: III-Nitrides, ed. by M. Razeghi, M. Henini (Elsevier, Amsterdam, 2004), pp. 518–559
65.
Authors and Editors of the LB Volumes III/17A-22A-41A1b, Gallium nitride (GaN), effective masses, g-factors, deformation potentials, in Group IV Elements, IV-IV and III-V Compounds. Part B—Electronic, Transport, Optical and Other Properties. Landolt-Börnstein—Group III Condensed Matter (Numerical Data and Functional Relationships in Science and Technology), vol. 41A1b, ed. by O. Madelung, U. Rössler, M. Schulz (Springer, Berlin, Heidelberg)
66.
67.
68.
69.
70.
71.
72.
73.
74.
75.
W. Gotz, N.M. Johnson, J. Walker, D.P. Bour, R.A. Street, Appl. Phys. Lett. 68, 667 (1996) CrossRef
76.
J.A. Freitas Jr., W.J. Moore, B.V. Shanabrook, G.C.B. Braga, S.K. Lee, S.S. Park, J.Y. Han, Phys. Rev. B. 66(2002), 233311 (2002) CrossRef
77.
78.
R. Doradzinski, R. Dwilinski, J. Garczynski, L.P. Sierzputowski, Y. Kanbara, in Technology of Gallium Nitride Crystal Growth, ed. by D. Ehrentraut, E. Meissener, M. Bockowski (Springer, Cham, 2010), pp. 137–159, Chapter 7
79.
D.O. Demchenko, I.C. Diallo, M.A. Rashchikov, Phys. Rev. Lett. 110, 087404 (2013) CrossRef
80.
J.A. Freitas Jr., B.N. Feigelson, T.J. Anderson, Appl. Phys. Express 6, 111001 (2013) CrossRef
81.
M. Ilegems, R. Dingle, R.A. Logan, J. Appl. Phys. 43, 3797 (1972)
82.
M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Umemo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka, O. Oda, J. Cryst. Growth 244, 6 (2002) CrossRef
83.
S. Addachi, Properties of Group-IV, III-V and II-VI Semiconductors (Wiley, Chichester, 2005) CrossRef
84.
D. Ehrentraut, T. Fukuda, Proc. IEEE 98, 1316 (2010)
85.
W. Jiang, D. Ehrentraut, B.C. Downey, D.S. Kamber, R.T. Pakalapati, H.D. Yoo, M.P. D’Evelyn, J. Cryst. Growth 403, 18 (2014) CrossRef
86.
S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1991) CrossRef
87.
D.I. Florescu, V.M. Asnin, F.H. Pollak, R.J. Molnar, C.E.C. Wood, J. Appl. Phys. 88, 3295 (2000) CrossRef
88.
G.A. Slack, L.J. Schowalter, J.A. Freitas Jr., J. Cryst. Growth 246, 287 (2002) CrossRef
89.
A. Jezowski, B.A. Denilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, T. Paszkiewicz, Solid State Commun. 128, 69 (2003) CrossRef
90.
D.I. Florescu, V.M. Asnin, F.H. Pollak, A.M. Jones, M.J. Schurman, I. Fergunson, Appl. Phys. Lett. 77, 1464 (2000)
91.
J. Zou, D. Kotchetkov, A.A. Baladin, D.I. Florescu, F.H. Pollack, J. Appl. Phys. 92, 2534 (2002) CrossRef
92.
W. Liu, A.A. Baladin, C. Lee, H. Lee, Phys. Status Solidi A 179, R135 (2005) CrossRef
93.
D.I. Florescu, F.H. Pollak, T. Paskova, B. Monemar, Compound Semicond. 7, 62 (2001)
94.
95.
C. Mion, J.F. Muth, E.A. Preble, D. Hanser, Appl. Phys. Lett. 89, 092123 (2006) CrossRef
96.
R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Collazo, Z. Sitar, J. Appl. Phys. 124, 105106 (2018) CrossRef
97.
98.
Y. Oshima, T. Suzuki, T. Eri, Y. Kawaguchi, K. Watanabe, M. Shibata, T. Mishima, J. Appl. Phys. 98, 103509 (2005) CrossRef
99.
I. Grzegory, J. Jun, M. Bockowski, M. Wrobleski, B. Lucznik, S. Porowski, J. Phys. Chem. Solids 56, 639 (1995) CrossRef
100.
D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman, Appl. Phys. Lett. 73, 2018 (1998). Erratum, Appl. Phys. Lett. 75, 1646 (1999)
101.
M. Amilusik, T. Sochacki, B. Lucznik, M. Bockowski, B. Sadovyi, A. Presz, I. Dziecielewski, I. Grzegory, J. Cryst. Growth 380, 99 (2013) CrossRef
102.
T. Sochacki, M. Amilusik, B. Lucznik, M. Fijakowski, J.L. Weyher, B. Sadovyi, G. Kamler, G. Nowak, E. Litwin-Staszewska, A. Khachapuridze, I. Grzegory, R. Kucharski, M. Zajac, R. Doradzinski, M. Bockowski, Jpn. J. Appl. Phys. 53, 05FA04 (2014)
103.
T. Sochacki, Z. Bryan, M. Amilusik, R. Collazo, B. Lucznik, J.L. Weyher, G. Nowak, B. Sadovyi, R. Kucharski, M. Zajac, R. Doradzinski, R. Dwilinski, I. Grzegory, M. Bockowski, Z. Sitar, Appl. Phys. Express 6, 075504 (2013) CrossRef
104.
H. Fujikura, T. Yoshida, M. Shibata, Y. Otoki, Proceedings of SPIE, vol. 10104, 1010403-1 (2017)
105.
P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czarnecki, S. Najda, M. Zajac, R. Kucharski, Appl. Phys. Express 4, 062103 (2011) CrossRef
106.
P. Perlin, S. Stanczyk, A. Kafar, A. Bojarska, L. Marona, R. Czarnecki, G. Targowski, G. Muziol, H. Turski, E. Grzanka, S. Grzanka, S. Najda, P. Wisniewski, T. Czyszanowski, M. Leszczynski, C. Skierbiszewski, M. Zajac, R. Kucharski, T. Suski, Photonics Lett. Pol. 6, 32 (2014)
107.
Y. Hatakeyama, K. Nomoto, N. Kaneda, T. Kawano, T. Mishima, T. Nakamura, IEEE Electron Device Lett. 32, 1674 (2011) CrossRef
108.
I.C. Kizilyalli, A.P. Edward, H. Nie, D. Bour, T. Prunty, D. Disney, IEEE Electron Device Lett. 35, 247 (2014) CrossRef
109.
B.S. Kang, F. Ren, Y. Irokawa, K.W. Baik, S.J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, H.-J. Ko, H.-Y. Lee, J. Vac. Sci. Technol. B: Micronelectron. Process. Phenom. 22(2), 710 (2004)
Metadata
Title
Properties of Ammonothermal Crystals
Authors
Jaime A. Freitas Jr.
Marcin Zając
Copyright Year
2021
Book
Ammonothermal Synthesis and Crystal Growth of Nitrides

Print ISBN: 978-3-030-56304-2

Electronic ISBN: 978-3-030-56305-9

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-3-030-56305-9_16