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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2016

02-01-2016

Properties of chemically-deposited nanocrystalline MoS2 thin films

Authors: D. J. Sathe, P. A. Chate, S. B. Sargar, S. V. Kite, Z. D. Sande

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2016

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Abstract

Molybdenum disulfide thin films have been deposited from an aqueous acidic bath using sodium thiosulphate as sulphide ion source. The various preparative parameters are optimized and growth mechanism is discussed. X-ray diffraction analysis reveals that the films are polycrystalline in nature with hexagonal structure. A microstructural study has been carried out by field emission scanning electron microscopy. EDAX analysis shows that the films are nearly stoichiometries of the Mo:S i.e. 1:2. Electrical conductivity was found to be in the order of 10−5–10−3 (Ω cm)−1. From optical absorption studies the energy band gap of MoS2 is estimated to be 1.7 eV.
previous article Structural, optical and ferromagnetic properties of cobalt doped CdTe quantum dots
next article Dielectric properties of 0.95(Mg0.98Zn0.02)TiO3–0.05CaTiO3 ceramic sintered by calcium borosilicate glass ceramic doping

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Metadata
Title
Properties of chemically-deposited nanocrystalline MoS2 thin films
Authors
D. J. Sathe
P. A. Chate
S. B. Sargar
S. V. Kite
Z. D. Sande
Publication date
02-01-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-4230-6

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