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2019 | OriginalPaper | Chapter

Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer

Authors : Pramila Mahala, Amit K. Goyal, Sumitra Singh, Suchandan Pal

Published in: Advances in Signal Processing and Communication

Publisher: Springer Singapore

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Abstract

An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

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Metadata
Title
Reducing Efficiency Droop for Si-Doped Barrier Model of GaN/InGaN Multi-quantum Well Light-Emitting Diode by Designing Electron Blocking Layer
Authors
Pramila Mahala
Amit K. Goyal
Sumitra Singh
Suchandan Pal
Copyright Year
2019
Publisher
Springer Singapore
Book
Advances in Signal Processing and Communication

Print ISBN: 978-981-13-2552-6

Electronic ISBN: 978-981-13-2553-3

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-2553-3_55