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Journal of Electronic Materials

Reducing Subsurface Damage with Trizact™ Diamond Tile During a Prime Silicon Wafer Grinding Process

  • 11-03-2023
  • Original Research Article
Published in:
Authors
John J. Gagliardi
Vincent D. Romero
Fabian Stolzenburg
Anatoly Z. Rosenflanz
Jason D. Anderson
Published in
Journal of Electronic Materials | Issue 5/2023

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Abstract

The article delves into the challenges and solutions associated with subsurface damage (SSD) in prime silicon wafer manufacturing. It introduces an improved Trizact™ Diamond Tile (TDT) product that demonstrates a significant reduction in SSD during the grinding process. The authors present experimental data and discuss the key components and modifications made to TDT to achieve these results. The paper also highlights the potential benefits of this innovation, such as the possibility of eliminating or minimizing subsequent finishing steps, leading to improved wafer quality and potentially lower production costs. The research is particularly relevant for professionals seeking to enhance the efficiency and effectiveness of semiconductor wafer manufacturing processes.
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previous article Switching Enhancement in Copper Oxide Thin-Film Transistors via Molybdenum Trioxide Buffering and Nitrogen Doping
next article Synthesis of Cu Nanowires by Template Electrodeposition and Their Application in Pressure Sensors
Title
Reducing Subsurface Damage with Trizact™ Diamond Tile During a Prime Silicon Wafer Grinding Process
Authors
John J. Gagliardi
Vincent D. Romero
Fabian Stolzenburg
Anatoly Z. Rosenflanz
Jason D. Anderson
Publication date
11-03-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 5/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10326-9
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