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Journal of Materials Science: Materials in Electronics

Published in:

07-02-2018

Role of nuclei in controllable MoS₂ growth by modified chemical vapor deposition

Authors: Wenlei Song, Ming Gao, Pengbo Zhang, Baichao Han, Dongyun Chen, Xiaohong Fang, Lei Zhao, Zhongquan Ma

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2018

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Abstract

The large area and high-quality two-dimensional molybdenum disulfide (2D-MoS₂) film has been synthesized by a modified single-zone chemical vapor deposition technique. The influence of gas environment, reaction temperature and gap distance (between MoO₃ precursor and substrate) on 2D-MoS₂ growth were systematically investigated. A stable gas environment was prerequisite for the formation of 2D-MoS₂, and it can be achieved by adjusting the pressure and flow rate of N₂ in the furnace tube, which was numerical estimated via Antoine equation. The thickness, quality (uniformity and crystallinity), roughness, and chemical composition of the MoS₂ nano-film were characterized by the optical microscopy, scanning electron microscope, Raman spectroscopy, Atomic force microscope, and X-ray photoelectron spectroscopy, respectively. The results showed that the quality of MoS₂ nano-film was greatly influenced by the nucleation density on the substrate, which could be controlled by modulating the reaction temperature and gap distance. Moreover, a “frustum-like” model was established to match the practical reaction situation and clarify the internal relationship among reaction temperature, gap distance and the nucleation density of MoS₂ film. Finally, a high-quality monolayer MoS₂ nano-film, at 800 °C with a gap distance of 3.5 mm, was obtained and verified by experimental and numerical analyses.

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Title: Role of nuclei in controllable MoS2 growth by modified chemical vapor deposition
Authors: Wenlei Song
Ming Gao
Pengbo Zhang
Baichao Han
Dongyun Chen
Xiaohong Fang
Lei Zhao
Zhongquan Ma
Publication date: 07-02-2018
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 9/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-018-8733-9

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