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2018 | OriginalPaper | Chapter

98. Scanning Tunneling Spectroscopy

Author : Keisuke Sagisaka

Published in: Compendium of Surface and Interface Analysis

Publisher: Springer Singapore

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Abstract

Spectroscopic measurement performed with STM, referred to as scanning tunneling spectroscopy (STS), provides information proportional to the local density of states (LDOS), the number of states per unit energy, of the sample surface. The STS measurement is usually made by positioning the STM tip over a target feature of a surface, deactivating the feedback loop to fix the STM tip height, applying a sample bias ramp, and recording tunneling current (I) or differential conductance (dI/dV).

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Literature
1.
go back to reference A rigorous assessment of the tunneling current and dI/dV can be found in Chen, C. J.: Introduction to Scanning Tunneling Microscopy: 2nd edn. Oxford University Press (2008) A rigorous assessment of the tunneling current and dI/dV can be found in Chen, C. J.: Introduction to Scanning Tunneling Microscopy: 2nd edn. Oxford University Press (2008)
2.
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7.
go back to reference Sagisaka, K., Fujita, D.: A parabolic quantum well on a single dimer row of the Si(001) surface studied by scanning tunneling microscopy. J. Phys: Conf. Ser. 100, 052002 (2008) Sagisaka, K., Fujita, D.: A parabolic quantum well on a single dimer row of the Si(001) surface studied by scanning tunneling microscopy. J. Phys: Conf. Ser. 100, 052002 (2008)
Metadata
Title
Scanning Tunneling Spectroscopy
Author
Keisuke Sagisaka
Copyright Year
2018
Publisher
Springer Singapore
DOI
https://doi.org/10.1007/978-981-10-6156-1_98

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