Issue 2/2013
Content (22 Articles)
Light emission from silicon nanocrystals
O. B. Gusev, A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich
Monoisotopic silicon 28Si in spin resonance spectroscopy of electrons localized at donors
A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, V. A. Gavva, A. V. Gusev, N. V. Abrosimov, H. Riemann
Utilization of silicon detectors with “ideal-diode” current-voltage characteristics
V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskiy, M. S. Lazeeva, V. V. Filimonov, E. V. Sherstnev
Photoresponse recovery in silicon photodiodes upon VUV irradiation
V. V. Zabrodskiy, P. N. Aruev, V. P. Belik, B. Ya. Ber, D. Yu. Kazantsev, M. V. Drozdova, N. V. Zabrodskaya, M. S. Lazeeva, A. D. Nikolenko, V. L. Sukhanov, V. V. Filimonov, E. V. Sherstnev
Radiation effects in Si-Ge quantum size structure (Review)
N. A. Sobolev
Annealing kinetics of boron-containing centers in electron-irradiated silicon
O. V. Feklisova, N. A. Yarykin, J. Weber
Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon
O. V. Feklisova, X. Yu, D. Yang, E. V. Yakimov
Shallow-donor lasers in uniaxially stressed silicon
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, N. V. Abrosimov, H. Riemann, S. G. Pavlov, H. -W. Hübers
Damage formation in Si under irradiation with PF n + ions of different energies
K. V. Karabeshkin, P. A. Karaseov, A. I. Titov
Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy
Yu. A. Astrov, S. A. Lynch, V. B. Shuman, L. M. Portsel, A. A. Makhova, A. N. Lodygin
Aligned arrays of zinc oxide nanorods on silicon substrates
A. N. Redkin, M. V. Ryzhova, E. E. Yakimov, A. N. Gruzintsev
Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers
A. S. Bondarenko, O. F. Vyvenko, I. A. Isakov
Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers
V. I. Vdovin, E. V. Ubyivovk, O. F. Vyvenko
Optical properties of silicon with a high content of boron
L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin
Identification of copper-copper and copper-hydrogen complexes in silicon
N. A. Yarykin, J. Weber
Tunnel field-effect transistors with graphene channels
D. A. Svintsov, V. V. Vyurkov, V. F. Lukichev, A. A. Orlikovsky, A. Burenkov, R. Oechsner
The electrically active centers in oxygen-implanted silicon
A. S. Loshachenko, O. F. Vyvenko, E. I. Shek, N. A. Sobolev
Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum
N. A. Sobolev, A. S. Loshachenko, D. S. Poloskin, E. I. Shek
Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra
O. S. Komkov, D. D. Firsov, A. N. Semenov, B. Ya. Meltser, S. I. Troshkov, A. N. Pikhtin, S. V. Ivanov
Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, Yu. Yu. Kuznetsov
Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface
N. V. Agrinskaya, V. A. Berezovets, V. I. Kozub, I. S. Kotousova, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova
High-efficiency GaSb photocells
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, N. Kh. Timoshina, N. S. Potapovich, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev