Issue 3/2011
Content (24 Articles)
Mechanisms of defect formation in ingots of 4H silicon carbide polytype
D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, A. Yu. Fadeev
The I–V characteristics of asymmetrically necked samples of high-resistivity silicon
S. Ašmontas, V. Kleiza
Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field
M. G. Dadamirzayev
Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa2Se4
T. G. Kerimova, R. A. Guliyev
A model of nonlinear optical transmittance for insulator nanocomposites
V. P. Dzyuba, A. E. Krasnok, J. N. Kulchin, I. V. Dzyuba
Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane
J. S. Vainshtein, O. I. Kon’kov, A. V. Kukin, O. S. El’tsina, L. V. Belyakov, E. I. Terukov, O. M. Sreseli
Raman scattering in self-formed nanoporous carbon produced on the basis of silicon carbide
M. E. Kompan, D. S. Krylov, V. V. Sokolov
Mechanisms of current flow in Au-CdTe contacts with a modified surface
V. P. Machnij, N. J. Skrypnyk
Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation
B. K. Serdega, I. E. Matyash, L. S. Maximenko, S. P. Rudenko, V. A. Smyntyna, V. S. Grinevich, L. N. Filevskaya, B. Ulug, A. Ulug, B. M. Yücel
Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well
L. P. Avakyants, P. Yu. Bokov, E. V. Glazyrin, I. P. Kazakov, A. V. Chervyakov
Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties
I. E. Tyschenko, V. P. Popov
Structure and properties of small clusters of transition 3d-element oxides
A. V. Popov
Carrier transport in layered semiconductor (p-GaSe)-ferroelectric (KNO3) composite nanostructures
A. P. Bakhtinov, V. N. Vodopyanov, Z. D. Kovalyuk, V. V. Netyaga, D. Yu. Konoplyanko
Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy
A. V. Vasin, P. N. Okholin, I. N. Verovsky, A. N. Nazarov, V. S. Lysenko, K. I. Kholostov, V. P. Bondarenko, Y. Ishikawa
Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures
A. N. Imenkov, V. V. Sherstnev, E. A. Grebenshchikova, M. A. Sipovskaya, M. I. Larchenkov, D. I. Tarasov, A. N. Baranov, Yu. P. Yakovlev
Edge inversion channels and surface leakage currents in high-voltage semiconductor devices
A. S. Kyuregyan
Laminated grid solar cells (LGCells) on multicrystalline silicon. Application of atomic hydrogen treatment
G. G. Untila, T. N. Kost, A. B. Chebotareva, M. E. Belousov, V. A. Samorodov, A. Yu. Poroykov, M. A. Timofeyev, M. B. Zaks, A. M. Sitnikov, O. I. Solodukha
Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector
N. V. Tkach, Ju. A. Seti
HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii, I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. V. Sorochkin
Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond
A. A. Altukhov, A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, V. E. Zemlyakov, K. N. Ziablyuk, A. V. Mitenkin, A. B. Muchnikov, D. B. Radishev, A. K. Ratnikova, Yu. Yu. Fedorov
The influence of hydrogenation on the electrical properties of the Cd x Hg1 − x Te epitaxial structures
V. S. Varavin, G. Yu. Sidorov, M. O. Garifullin, A. V. Vishnyakov, Yu. G. Sidorov
Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy
P. A. Borodin, A. A. Bukharaev, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, Yu. A. Denisov
The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. G. Kesler, V. A. Skuratov, A. G. Cherkov
Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
B. Ya. Ber, E. V. Bogdanova, A. A. Greshnov, A. L. Zakgeim, D. Yu. Kazanzev, A. P. Kartashova, A. S. Pavluchenko, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, E. B. Yakimov