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Semiconductors

Issue 4/2014

Content (26 Articles)

Electronic Properties of Semiconductors

Features of the band structure of (CuInSe2)1 − x (MeSe) x alloys (Me = Mn, Fe)

Sh. M. Hasanli, Yu. M. Basalaev, U. F. Samedova

Electronic Properties of Semiconductors

On the thermal properties of Ag2Te and Ag2Se in the region of the phase transition

S. A. Aliev, D. G. Arasly

Electronic Properties of Semiconductors

On the polarization caused by bulk charges and the ionic conductivity in TlInSe2 crystals

R. M. Sardarly, O. A. Samedov, N. A. Alieva, A. P. Abdullayev, E. K. Huseynov, I. S. Hasanov, F. T. Salmanov

Electronic Properties of Semiconductors

Thermoelectric efficiency of intermetallic compound ZnSb

M. I. Fedorov, L. V. Prokofieva, Yu. I. Ravich, P. P. Konstantinov, D. A. Pshenay-Severin, A. A. Shabaldin

Electronic Properties of Semiconductors

Calculation of the electron mobility for the Δ1 model of the conduction band of germanium single crystals

S. V. Luniov, P. F. Nazarchuk, O. V. Burban

Spectroscopy, Interaction with Radiation

Light emission from tin-dioxide crystals

V. F. Agekian, A. Yu. Serov, N. G. Filosofov

Spectroscopy, Interaction with Radiation

Nonlinear optical effect upon the irradiation of GaN with cluster ions

P. A. Karaseov, K. V. Karabeshkin, A. I. Titov, V. B. Shilov, G. M. Ermolaeva, V. G. Maslov, A. O. Orlova

Surfaces, Interfaces, and Thin Films

Effect of the tin impurity on the energy spectrum and photoelectric properties of nanostructured In2O3 films

K. A. Drozdov, I. V. Krylov, A. A. Irkhina, R. B. Vasiliev, M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, D. R. Khokhlov

Surfaces, Interfaces, and Thin Films

p-GaSb(Ox)/n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, T. N. Ushakova, G. A. Il’chuk

Surfaces, Interfaces, and Thin Films

Study of GaInP solar-cell interfaces by variable-flux spectral measurements

I. A. Morozov, A. S. Gudovskikh

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers

V. A. Gergel, I. V. Altukhov, A. V. Verkhovtseva, G. G. Galiev, N. M. Gorshkova, S. S. Zhigaltsov, A. P. Zelenyi, E. A. Il’ichev, V. S. Minkin, S. K. Paprotskij, M. N. Yakupov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Composite materials based on nanostructured zinc oxide

Kh. A. Abdullin, N. B. Bakranov, D. V. Ismailov, J. K. Kalkozova, S. E. Kumekov, L. V. Podrezova, G. Cicero

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Morphological characteristics of grain boundaries in multicrystalline silicon

S. M. Pescherova, A. I. Nepomnyaschih, L. A. Pavlova, I. A. Eliseev, R. V. Presnyakov

Physics of Semiconductor Devices

Long-channel field-effect transistor with short-channel transistor properties

A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

Physics of Semiconductor Devices

Electrical properties of MOS diodes In/TiO2/p-CdTe

V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, P. D. Maryanchuk, K. S. Ulyanytskiy

Physics of Semiconductor Devices

Current flow through metal shunts in ohmic contacts to n +-Si

A. V. Sachenko, A. E. Belyaev, V. A. Pilipenko, T. V. Petlitskaya, V. A. Anischik, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. O. Vinogradov, V. N. Sheremet

Physics of Semiconductor Devices

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

A. M. Mahajan, A. G. Khairnar, B. J. Thibeault

Physics of Semiconductor Devices

Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

A. V. Babichev, A. A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov

Physics of Semiconductor Devices

Model of the behavior of MOS structures under ionizing irradiation

O. V. Aleksandrov

Fabrication, Treatment, and Testing of Materials and Structures

Formation of built-in potential in Si (100) crystals under microwave plasma treatment

R. K. Yafarov

Fabrication, Treatment, and Testing of Materials and Structures

Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation

A. A. Shemukhin, Y. V. Balakshin, V. S. Chernysh, S. A. Golubkov, N. N. Egorov, A. I. Sidorov

Fabrication, Treatment, and Testing of Materials and Structures

Structure and properties of electrodeposited films and film stacks for precursors of chalcopyrite and kesterite solar cells

N. P. Klochko, G. S. Khrypunov, N. D. Volkova, V. R. Kopach, A. V. Momotenko, V. N. Lyubov

Fabrication, Treatment, and Testing of Materials and Structures

Electrodeposited zinc oxide arrays with the moth-eye effect

N. P. Klochko, G. S. Khrypunov, Y. O. Myagchenko, E. E. Melnychuk, V. R. Kopach, K. S. Klepikova, V. M. Lyubov, A. V. Kopach

Fabrication, Treatment, and Testing of Materials and Structures

Properties of Zn1 − x Co x O films produced by pulsed laser deposition with fast particle separation

A. A. Lotin, O. A. Novodvorsky, V. V. Rylkov, D. A. Zuev, O. D. Khramova, M. A. Pankov, B. A. Aronzon, A. S. Semisalova, N. S. Perov, A. Lashkul, E. Lahderanta, V. Ya. Panchenko

Fabrication, Treatment, and Testing of Materials and Structures

Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

V. A. Khandozhko, Z. R. Kudrynskyi, Z. D. Kovalyuk

Fabrication, Treatment, and Testing of Materials and Structures

Specific features of the sol-gel formation and optical properties of 3d metal/porous silicon composites

A. S. Lenshin, P. V. Seredin, D. A. Minakov, V. M. Kashkarov, B. L. Agapov, E. P. Domashevskaya, I. E. Kononova, V. A. Moshnikov, N. S. Terebova, I. N. Shabanova

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