Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Microsystem Technologies
Published in: Microsystem Technologies 5/2010

01-05-2010 | Technical Paper

Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

Authors: Ü. Sökmen, A. Stranz, S. Fündling, S. Merzsch, R. Neumann, H.-H. Wehmann, E. Peiner, A. Waag

Published in: Microsystem Technologies | Issue 5/2010

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

We achieved to etch nanostructures as well as structures with high aspect ratios in silicon using an inductively coupled plasma cryogenic deep reactive ion etching process. We etched cantilevers, submicron diameter pillars, membranes and deep structures in silicon with etch rates between 13 nm/min and 4 μm/min. These structures find applications as templates for metal organic vapour phase epitaxial growth of GaN-based nanostructures for optoelectronic devices or they are the basic constituents of a nanoparticle balance in the subnanogram range and of a thermoelectric generator.
previous article Characterization and displacement control of low surface-stress AlN-based piezoelectric micro-resonators
next article What happens turning a 250-μm-thin piezo-stack sideways?

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Literature
Boukai AI, Bunimovich Y, Tahir-Kheli J, Yu J-K, Goddard WA III, Heath JR (2008) Silicon nanowires as efficient thermoelectric materials. Nature 451:168–171CrossRef
Fündling S, Li S, Sökmen Ü, Merzsch S, Hinze P, Weimann T, Jahn U, Trampert A, Riechert H, Peiner E, Wehmann H-H, Waag A (2009) Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs. Phys Status Solidi A 206(6):1194–1198. doi:10.​1002/​pssa.​200880841
Hochbaum AI, Chen R, Delgado RD, Liang W, Garnett EC, Najarian M, Majumdar A, Yang P (2008) Enhanced thermoelectric performance of rough silicon nanowires. Nature 451:163–167CrossRef
Katsuyama S, Takagi Y, Ito M, Majima K, Nagai H, Sakai H, Yoshimura K, Kosuge K (2002) Thermoelectric properties of (Zn1−yMgy)1−xAlxO ceramics prepared by the polymerized complex method. J Appl Phys 92(3):1391–1398CrossRef
Mertens C (2004) Die Niedertemperatur-Verbindungstechnik der Leistungselektronik. Dissertation, TU Braunschweig
Noudem JG, Lemonnier S, Prevel M, Reddy ES, Guilmeau E, Goupil C (2008) Thermoelectric ceramics for generators. J Eur Ceram Soc 28:41–48CrossRef
Stranz A, Sökmen Ü, Peiner E, Waag A (07-10.09.2008) Sapphire on silicon assembly using a nanostructured compliant interface. Techn. Dig. 22nd International Conference on Eurosensors XXII, Dresden, Germany
Tanner SM, Gray JM, Rogers CT, Bertness KA, Sanford NA (2007) High-Q GaN nanowire resonators and oscillators. Appl Phys Lett 91(203117):1–3
Metadata
Title
Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process
Authors
Ü. Sökmen
A. Stranz
S. Fündling
S. Merzsch
R. Neumann
H.-H. Wehmann
E. Peiner
A. Waag
Publication date
01-05-2010
Publisher
Springer-Verlag
Published in
Microsystem Technologies / Issue 5/2010
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-010-1035-7

Other articles of this Issue 5/2010

Microsystem Technologies 5/2010 Go to the issue

Technical Paper

Analysis of the quality factor of AlN-actuated micro-resonators in air and liquid

Technical Paper

MOEMS translatory actuator characterisation, position encoding and closed-loop control

Technical Paper

Manufacturing, assembling and packaging of miniaturized neural implants

Technical Paper

Characterization and displacement control of low surface-stress AlN-based piezoelectric micro-resonators

Technical Paper

Power sensitivity of vibration energy harvester

Technical Paper

Design of self-assembling micromirror arrays for light guiding applications