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01-02-2025

Shallow donor impurity states in wurtzite InGaN/GaN coupled quantum wells under built-in electric field, hydrostatic pressure, and strain effects

Authors: Guang-Xin Wang, Xiu-Zhi Duan

Published in: Journal of Computational Electronics | Issue 1/2025

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Abstract

In this paper, we investigated theoretically the hydrogenic donor impurity states in strained wurtzite (In,Ga)N-GaN coupled quantum wells (CQWs). The variational approach is employed to obtain the dependence on built-in electric field (BEF), hydrostatic pressure, indium composition, and structure size of the binding energy of hydrogenic donor impurity (BEHDI). The results reveal that hydrostatic pressure and structure size of the CQWs have a great influence on BEF which affects strongly the BEHDI. With the increment in hydrostatic pressure, the BEF strength of well and barrier layers enhances monotonously. However, by increasing the well width (barrier width), the BEF strength of well layer reduces (enhances) gradually, and that of barrier layers enhances (reduces). Meantime, it reveals that the binding energy (1) enhances linearly as the hydrostatic pressure is increased, (2) is more sensitive to geometrical parameters (width of well and/or barrier), and (3) demonstrates a maximum value as an impurity ion is shifted from one side of the CQWs to the other.

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Metadata
Title
Shallow donor impurity states in wurtzite InGaN/GaN coupled quantum wells under built-in electric field, hydrostatic pressure, and strain effects
Authors
Guang-Xin Wang
Xiu-Zhi Duan
Publication date
01-02-2025
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 1/2025
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02238-6