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Published in:
2007 | OriginalPaper | Chapter
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates
Authors : E. Bahat-Treidel, V. Sidorov, J. Würfl, G. Tränkle
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
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Two dimensional physical-based device simulations (Silvaco — “Atlas”) of breakdown voltage (
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hr
) effect in AlGaN/GaN HEMTs (high electron mobility transistors) on silicon carbide (4H-SiC) device are preformed. The influence of novel single layer grating field plates (FPs), consisting of gate connected fingers and floating fingers, on
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, obtained via the electric field distribution in the AlGaN layer is studied. We have found that the grating FPs reduce the electric field peaks and efficiently distribute the electrical filed along the AlGaN-layer and thus enhance device
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, characteristics.