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Journal of Computational Electronics

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15-08-2023

Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

Authors: Aohang Zhang, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu, Yuying Wang, Jian Li

Published in: Journal of Computational Electronics | Issue 5/2023

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Abstract

In this paper, the single-event effects of Schottky contact super barrier rectifier (SSBR) and conventional super barrier rectifier (SBR) as comparison structure are simulated and discussed. The high-k dielectric has a larger dielectric constant and a larger physical thickness at the same equivalent oxide thickness (EOT). Therefore, it is used to enhance the single-event gate rupture (SEGR) performance of the devices. Simulation results show that the SEGR performance of SSBR and SBR is significantly improved after using high-k dielectric as the gate dielectric. Furthermore, due to the absence of a parasitic bipolar junction transistor (BJT), SSBR has a higher single-event burnout (SEB) performance than conventional SBR. In conclusion, SSBR has a good performance of single-event effect (SEGR and SEB) and is better than that of SBR after using high-k dielectric as the gate dielectric.

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Title: Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric
Authors: Aohang Zhang
Wensuo Chen
Jiaweiwen Huang
Qisheng Yu
Yuying Wang
Jian Li
Publication date: 15-08-2023
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 5/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02088-8

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Supercontinuum spectra above 2700 nm in circular lattice photonic crystal fiber infiltrated chloroform with the low peak power

Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET

Electronic, transport and ballistic device properties of quasi-one-dimensional GeS

Research on high sensitivity fano resonance sensing based on MIM waveguide coupled with double Fibonacci spirals

Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green’s function: heterostructure mode space method and core charge approximation

RSDFT-NEGF transport simulations in realistic nanoscale transistors