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Semiconductors
Published in: Semiconductors 2/2017

01-02-2017 | Physics of Semiconductor Devices

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

Authors: A. L. Zakgeim, N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyy, N. M. Stus’, A. A. Usikova, A. E. Cherniakov

Published in: Semiconductors | Issue 2/2017

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previous article Specific features of waveguide recombination in laser structures with asymmetric barrier layers
next article Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

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Metadata
Title
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Authors
A. L. Zakgeim
N. D. Il’inskaya
S. A. Karandashev
A. A. Lavrov
B. A. Matveev
M. A. Remennyy
N. M. Stus’
A. A. Usikova
A. E. Cherniakov
Publication date
01-02-2017
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 2/2017
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782617020269

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Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors

Fabrication, Treatment, and Testing of Materials and Structures

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

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