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2013 | OriginalPaper | Chapter

16. Spectroscopic Ellipsometry of Nanoscale Materials for Semiconductor Device Applications

Authors : Alain C. Diebold, Florence J. Nelson, Vimal K. Kamineni

Published in: Ellipsometry at the Nanoscale

Publisher: Springer Berlin Heidelberg

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Abstract

Several years ago, the semiconductor industry began to refer to integrated circuits as nanoelectronic devices [1]. Now, most realize that nanoelectronics is the most prevalent nanotechnology. The continued decrease in device feature size has challenged spectroscopic ellipsometry (SE) with nano-films, nanowires, and nano-dots. There are many examples of the measurement of thin dielectric films [2, 3], and now there are examples of crystalline semiconductor nanowires in the form of the Fin in the transistor known as a Fin-FET [4]. The semiconductor industry is also working on materials for “beyond CMOS” devices.

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G.D. Hutcheson, The first nanochips. Sci. Am. 290(4), 48–55 (2004)

V.K. Kamineni, J. Hilfiker, J. Freeouf, J. Fielden, S. Consiglio, R. Clark, G.J. Leusink, A.C. Diebold, Extension of Far UV spectroscopic ellipsometry studies of high-\(\kappa \) dielectric films to 130 nm. Thin Solid Films 519, 2894 (2011)CrossRef

M. Di, E. Bersch, S. Consiglio, R. Clark, T. Zhang, P. Tyagi, G. Leusink, T. Kaack, A.C. Diebold, Spectroscopic ellipsometry characterization of high-\(\kappa \) metal gate stacks with V\(_{t}\) shift layers. Thin Solid Films 519, 2889 (2011)

P. Leray, G.F. Lorusso, S. Cheng, N. Collaert, M. Jurczak, S. Shirke, Accurate and reliable optical CD of MuGFET down to 10 nm, metrology, inspection, and process control for microlithography XXI, in Proceedings of SPIE, 2007 ed. by C.N. Archie, vol. 6518, p. 65183B

K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5695), 666 (2004)CrossRef

L.A. Falkovsky, Optical properties of graphene. J. Phys. Conf. Ser. 129, 012004 (2008)

K.F. Mak, M.Y. Sfeir, Y. Wu, C.H. Lui, J.A. Misewich, T.F. Heinz, Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 101, 196405 (2008)CrossRef

R.R. Nair, P. Blake, A.N. Grigorenko, K.S. Novoselov, T.J. Booth, T. Stauber, N.M.R. Peres, A.K. Geim, Fine structure constant defines visual transparency of graphene. Science 320, 1308 (2008)CrossRef

L. Yang, J. Deslippe, C.H. Park, M.L. Cohen, S.G. Louie, Excitonic effects on the optical response of graphene and bilayer graphene. Phys. Rev. Lett. 103, 186802 (2009)CrossRef

10.

V.G. Kravets, A.N. Grigorenko, R.R. Nair, P. Blake, S. Anisimova, K.S. Novoselov, A.K. Geim, Spectroscopic ellipsometry of graphene and an exciton-shifted van Hove peak in absorption. Phys. Rev. B 81, 155413 (2010)CrossRef

11.

D.-H. Chae, T. Utikal, S. Weisenburger, H. Giessen, K.v. Klitzing, M. Lippitz, J. Smet, Excitonic fano resonance in free-standing graphene. Nano Lett. 11, 1379 (2011)

12.

J.C. Charlier, J.P. Michenaud, First-principles study of the electronic properties of simple hexagonal graphite. Phys. Rev. B 46, 4531 (1992)CrossRef

13.

J.G. Carter, R.H. Heubner, R.N. Hamm, R.D. Burkhoff, Optical properties of graphite in the region 1100 to 3000 Å. Phys. Rev. 137(2A), 639 (1965)

14.

J.C. Charlier, J.P. Michenaud, Tight-binding model for the electronic properties of simple hexagonal graphite. Phys. Rev. B 44, 13237 (1991)CrossRef

15.

S. Latil, S.V. Meunier, L. Henrard, Massless fermions in multilayer graphitic systems with misoriented layers: Ab initio calculations and experimental fingerprints. Phys. Rev. B 76, 201402 (2007)

16.

P. Blake, E.W. Hill, A.H. Castro Neto, K.S. Novoselov, D. Jiang, R. Yang, T.J. Booth, A.K. Geim, Making graphene visible. Appl. Phys. Lett. 91, 063124 (2007)CrossRef

17.

A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A.K. Geim, Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006)CrossRef

18.

J.W. Weber, V.E. Calado, M.C.M. van de Sanden, Optical constants of graphene measured by spectroscopic ellipsometry. Appl. Phys. Lett. 97, 091904 (2010)CrossRef

19.

X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, R.S. Ruoff, Large-area synthesis of high-quality and uniform graphene on copper foils. Science 324, 1312 (2009)CrossRef

20.

A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M.S. Dresselhaus, J. Kong, Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 9, 30 (2009)CrossRef

21.

S. Bae, H. Kim, Y. Lee, X. Xu, J.S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H.R. Kim, Y. Il Song, Y.J. Kim, K.S. Kim, B. Ozyilmaz, J.H. Ahn, B.H. Hong, S. Iijima, Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 5(8), 574–578 (2010)CrossRef

22.

X. Li, C.W. Magnuson, A. Venugopal, J. An, J.W. Suk, B. Han, M. Borysiak, W. Cai, A. Velamakanni, Y. Zhu, L. Fu, E.M. Vogel, E. Voelkl, L. Colombo, R.S. Ruoff, Graphene films with large domain size by a two-step chemical vapor deposition process. Nano Lett. 10(11), 4328–4334 (2010)CrossRef

23.

O.V. Yazyev, S.G. Louie, electron transport in polycrystalline graphene. see: http://arxiv.org/abs/1007.1703

24.

W. Wang, M. Balooch, C. Claypool, M. Zawaideh, K. Farnaam, Combined refl ectometry-ellipsometry technique to measure graphite down to monolayer thickness. Solid State Technol. 52, 18 (2009)

25.

F.J. Nelson, V.K. Kamineni, T. Zhang, E.S. Comfort, J.U. Lee, A.C. Diebold, Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry. Appl. Phys. Lett. 97, 253110 (2010)CrossRef

26.

M. Bruna, S. Borini, Optical constants of graphene layers in the visible range. Appl. Phys. Lett. 94, 031901 (2009)CrossRef

27.

P.Y. Huang, C.S. Ruiz-Vargas, A.M. van der Zande, W.S. Whitney, S. Garg, J.S. Alden, C.J. Hustedt, Y. Zhu, J. Park, P.L. McEuen, D.A. Muller, Imaging grains and grain boundaries in single-layer graphene: an atomic patchwork quilt. Nature 469, 389 (2011)CrossRef

28.

K. Kim, Z. Lee, W. Regan, C. Kisielowski, M.F. Crommie, A. Zettl, Grain boundary mapping in polycrystalline graphene. ACS Nano 5(3), 2142 (2011)CrossRef

29.

F. Nelson, V. Kamineni, T. Zhang, E. Comfort, J.U. Lee, A.C. Diebold, Spectroscopic ellipsometry of CVD graphene. ECS Trans. 35(3), 173 (2011)CrossRef

30.

H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (Wiley, Chichester, 2007)

31.

J. Lee, R.W. Collins, V.S. Veerasamy, J. Robertson, Analysis of amorphous carbon thin films by spectroscopic ellipsometry. J. Non-Cryst. Solids 227–230(1), 617 (1998)CrossRef

32.

K.F. Mak, C.H. Lui, J. Shan, T.F. Heinz, Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009)CrossRef

33.

G.E. Jellison Jr, J.D. Hunn, H.N. Lee, Measurement of optical functions of highly oriented pyrolytic graphite in the visible. Phys. Rev. B 76, 085125 (2007)CrossRef

34.

K.F. Mak, J. Shan, T.F. Heinz, Seeing many-body effects in single- and few-layer graphene: observation of two-dimensional saddle-point excitons. Phys. Rev. Lett. 106, 046401 (2011)CrossRef

35.

J. Cervenka, M.I. Katsnelson, C.F.J. Flipse, Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defects. Nat. Phys. 5, 840 (2009)CrossRef

36.

F. Nelson, A.C. Diebold, A. Sandin, D.B. Dougherty, D.E. Aspnes, J.E. Rowe, Optical and structural characterization of epitaxial graphene on 6H-SiC(0001)-Si by spectroscopic ellipsometry, auger and STM, in Proceedings of the 39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39), 2012 (In preparation)

37.

T. Hofmann, C.M. Herzinger, J.L. Tedesco, D.K. Gaskill, J.A. Woollam, M. Schubert, Terahertz ellipsometry and terahertz optical-hall effect. Thin Solid Films 519(9), 2593 (2011)CrossRef

38.

A. Majumdar, X. Wang, A. Kumar, J.R. Holt, D. Dobuzinsky, R. Venigalla, C. Ouyang, S.J. Koester, W. Haensch, Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs. IEEE Electron Device Lett. 30(4), 413 (2009)CrossRef

39.

J. Price, A.C. Diebold, Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films. J. Vac. Sci. Technol. B 24(4), 2156 (2006)CrossRef

40.

M. Rohlfing, S.G. Louie, Electron-hole excitations and optical spectra from first principles. Phys. Rev. B 62(8), 4927 (2000)CrossRef

41.

M. Cardona, L.F. Lastras-Martinez, D.E. Aspnes, Comment on ab initio calculation of excitonic effects in the optical spectra of semiconductors. Phys. Rev. Lett. 83(19), 3970 (1999)CrossRef

42.

P.Y. Yu, M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996)

43.

P. Lautenschlager, P.B. Allen, M. Cardona, Phonon-induced lifetime broadenings of electronic states and critical points in Si and Ge. Phys. Rev. B 33(8), 5501 (1986)CrossRef

44.

E.O. Kane, Band structure of silicon from an adjusted Heine-Abarenkov calculation. Phys. Rev. B 146(2), 558 (1966)CrossRef

45.

P. Lautenschlager, M. Garriga, L. Vina, M. Cardona, Temperature dependence of the dielectric function and interband critical points in silicon. Phys. Rev. B 36(9), 4821 (1987)CrossRef

46.

X. Zhao, C.M. Wei, L. Yang, M.Y. Chou, Quantum confinement and electronic properties of silicon nanowires. Phys. Rev. Lett. 92(23), 236805 (2004)CrossRef

47.

M.I. Alonso, I.C. Marcus, M. Garriga, A.R. Goni, Evidence of quantum confinement effects on interband optical transitions in Si nanocrystals. Phys. Rev. B 82, 045302 (2010)CrossRef

48.

A.C. Diebold, J. Price, Observation of quantum confinement and quantum size effects. Phys. Status Solidi A 205(4), 896 (2008)CrossRef

49.

A.A. Balandin, E.P. Pokatilov, D.L. Nika, Phonon engineering in Hetero- and nanostructures. J. Nanoelectron. Optoelectron. 2, 140 (2007)CrossRef

50.

M. Cardona, T.A. Meyer, M.L.W. Thewalt, Temperature dependence of the energy gap of semiconductors in the low-temperature limit. Phys. Rev. Lett. 92(19), 196403 (2004)CrossRef

51.

M. Cardona, Electron-phonon interaction in tetrahedral semiconductors. Solid State Commun. 133, 3 (2005)CrossRef

52.

P.B. Allen, M. Cardona, Temperature dependence of the direct gap of Si and Ge. Phys. Rev. B 27(8), 4760 (1983)CrossRef

53.

R. Lange, K.E. Junge, S. Zollner, S.S. Iyer, A.P. Powell, K. Eberl, Dielectric response of strained and relaxed Si\(_{1-x-y}\)Ge\(_{x}\)C\(_{y}\) alloys grown by molecular beam epitaxy on Si(001). J. Appl. Phys. 80(8), 4578 (1996)CrossRef

54.

G.E. Jellison, F.A. Modine, Optical constants for silicon at 300 and 10K determined from 1.64 to 4.73 eV by ellipsometry. J. Appl. Phys. 53(5), 3745 (1982)CrossRef

55.

A. Daunois, D.E. Aspnes, Electroreflectance and ellipsometry of silicon from 3 to 6 e V. Phys. Rev. B 18(4), 1978 (1824)

56.

V.K. Kamineni, A.C. Diebold, Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films. Appl. Phys. Lett. 99, 151903 (2011)CrossRef

57.

S.P. Hepplestone, G.P. Srivastava, Lattice dynamics of silicon nanostructures. Nanotechnology 17, 3288 (2006)CrossRef

58.

N. Lou, J. Groenen, G. Benassayag, A. Zwick, Acoustics at nanoscale: Raman-Brillouin scattering from thin silicon-on-insulator layers. Appl. Phys. Lett. 97, 141908 (2010)CrossRef

59.

L. Mantese, K.A. Bell, U. Rossow, D.E. Aspnes, Evidence of near-surface localization of excited electronic states in crystalline Si. J. Vac. Sci. Technol. B 15(4), 1196 (1997)CrossRef

60.

D.E. Aspnes, L. Mantese, K.A. Bell, U. Rossow, Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials. Phys. Status Solidi B 220, 709 (2000)CrossRef

61.

V.K. Kamineni, Electron-Phonon Interactions and Quantum Confinement Effects on Optical Transitions in Nanoscale Silicon Films (Dissertation submitted to the University at Albany, SUNY, 2011)

Title: Spectroscopic Ellipsometry of Nanoscale Materials for Semiconductor Device Applications
Authors: Alain C. Diebold
Florence J. Nelson
Vimal K. Kamineni
Publisher: Springer Berlin Heidelberg
Book: Ellipsometry at the Nanoscale
Print ISBN: 978-3-642-33955-4

Electronic ISBN: 978-3-642-33956-1

Copyright Year: 2013
DOI: https://doi.org/10.1007/978-3-642-33956-1_16