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2017 | OriginalPaper | Chapter

3. Spin Orbit Torque MRAM

Authors : Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati

Published in: Next Generation Spin Torque Memories

Publisher: Springer Singapore

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Abstract

The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alternate solution of the contemporary memory technologies.

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Title: Spin Orbit Torque MRAM
Authors: Brajesh Kumar Kaushik
Shivam Verma
Anant Aravind Kulkarni
Sanjay Prajapati
Publisher: Springer Singapore
Book: Next Generation Spin Torque Memories
Print ISBN: 978-981-10-2719-2

Electronic ISBN: 978-981-10-2720-8

Copyright Year: 2017
DOI: https://doi.org/10.1007/978-981-10-2720-8_3