Skip to main content
Top

2018 | OriginalPaper | Chapter

5. Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Split-gate embedded flash memory technology has been around for a couple of decades and has become a de facto standard for embedded products such as microcontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM or stacked-gate solutions. This chapter covers the fundamentals of split-gate embedded flash memories with an emphasis on SST’s widely adopted SuperFlash® memory technology as an example to demonstrate the benefits of a split-gate embedded flash-memory technologies. The fundamentals of SuperFlash technology, design, reliability, and scalability are discussed in detail in various sections, which would provide a detailed understanding of a split-gate, embedded flash-memory technology.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
2.
go back to reference F. Masuoka et. al. A new Flash EEPROM cell using triple polysilicon technology, IEEE Technical Digest IEDM (1984) F. Masuoka et. al. A new Flash EEPROM cell using triple polysilicon technology, IEEE Technical Digest IEDM (1984)
3.
go back to reference Embedded Flash Memories for Nano-Scale VLSIs, chapter 6, Springer, Berlin Embedded Flash Memories for Nano-Scale VLSIs, chapter 6, Springer, Berlin
6.
go back to reference B. Yeh, Single transistor non-volatile electrically alterable semiconductor memory device, U.S. Patent 5,029,130, 2 July 1991 B. Yeh, Single transistor non-volatile electrically alterable semiconductor memory device, U.S. Patent 5,029,130, 2 July 1991
7.
go back to reference S. Kianian, A. Levi, D. Lee, Y.-W. Hu, VLSI Symposium. Tech. Dig. 6A, 71–72 (1994) S. Kianian, A. Levi, D. Lee, Y.-W. Hu, VLSI Symposium. Tech. Dig. 6A, 71–72 (1994)
8.
go back to reference D. Lee, Self aligned method of forming a semiconductor memory array of floating gate memory cells and a memory array made thereby, U.S. Patent 6,329,685, 11 Dec 2001 D. Lee, Self aligned method of forming a semiconductor memory array of floating gate memory cells and a memory array made thereby, U.S. Patent 6,329,685, 11 Dec 2001
9.
go back to reference V. Markov, X. Liu, A. Kotov, A. Levi, T. Dang, and Y. Tkachev., in NVMTS (2003), p. 23 V. Markov, X. Liu, A. Kotov, A. Levi, T. Dang, and Y. Tkachev., in NVMTS (2003), p. 23
10.
go back to reference L.Q. Luo, Y.T. Chow, X.S. Cai, F. Zhang, Z.Q. Teo, D.X. Wang, K.Y. Lim, B.B. Zhou, J.Q. Liu, A. Yeo, T.L. Chang, Y.J. Kong, C.W. Yap, S. Lup, R. Long, J.B. Tan, D. Shum, N. Do, J.H. Kim, P. Ghazavi, V. Tiwari, in IEEE IMW (2015), pp. 165–169 L.Q. Luo, Y.T. Chow, X.S. Cai, F. Zhang, Z.Q. Teo, D.X. Wang, K.Y. Lim, B.B. Zhou, J.Q. Liu, A. Yeo, T.L. Chang, Y.J. Kong, C.W. Yap, S. Lup, R. Long, J.B. Tan, D. Shum, N. Do, J.H. Kim, P. Ghazavi, V. Tiwari, in IEEE IMW (2015), pp. 165–169
11.
go back to reference Y. Tkachev, X. Liu, A. Kotov, V. Markov, A. Levi, in NVMTS (2004), pp. 45–50 Y. Tkachev, X. Liu, A. Kotov, V. Markov, A. Levi, in NVMTS (2004), pp. 45–50
12.
13.
go back to reference M. Kamiya, Y. Kojima, Y. Kato, K. Tanaka, Y. Hayashi, in IEEE IEDM (1982), pp. 741–744 M. Kamiya, Y. Kojima, Y. Kato, K. Tanaka, Y. Hayashi, in IEEE IEDM (1982), pp. 741–744
14.
go back to reference A. T. Wu, T. Y. Chan, P.K. Ko, C. Hu, in IEEE IEDM (1986), pp. 584–587 A. T. Wu, T. Y. Chan, P.K. Ko, C. Hu, in IEEE IEDM (1986), pp. 584–587
15.
go back to reference H.C. Sung, F.L. Tan, T.H. Hsu, Y.C. Kao, Y.T. Lin, C.S. Wang., in IEEE Electron Device Letters, vol. 26, no. 3 (2005), pp. 194–196 H.C. Sung, F.L. Tan, T.H. Hsu, Y.C. Kao, Y.T. Lin, C.S. Wang., in IEEE Electron Device Letters, vol. 26, no. 3 (2005), pp. 194–196
16.
go back to reference Y. Dong, W. Kong, N. Do, S. L. Wang, G. Lee, in Solid-State Electronics, vol. 54 (2010), pp. 579–581 Y. Dong, W. Kong, N. Do, S. L. Wang, G. Lee, in Solid-State Electronics, vol. 54 (2010), pp. 579–581
17.
go back to reference Y. Dong, W. Kong, N. Do, S. L. Wang, G. Lee, J. Semiconductors 31 (2010) Y. Dong, W. Kong, N. Do, S. L. Wang, G. Lee, J. Semiconductors 31 (2010)
18.
go back to reference X. Liu, V. Markov, A. Kotov, T. Dang, A. Levi, in IEEE ICSSCIT (2006) X. Liu, V. Markov, A. Kotov, T. Dang, A. Levi, in IEEE ICSSCIT (2006)
19.
go back to reference A. Kotov, A. Levi, Y. Tkachev, and V. Markov, in IEEE NVMTS, 2002 A. Kotov, A. Levi, Y. Tkachev, and V. Markov, in IEEE NVMTS, 2002
20.
go back to reference Y. Tkachev, in IEEE ICMTS (2016), pp. 110–115 Y. Tkachev, in IEEE ICMTS (2016), pp. 110–115
21.
go back to reference H. Om’mani, M. Tadayoni, N. Thota, I. Yue, N. Do, in IEEE ICMTS (2013), pp. 192–194 H. Om’mani, M. Tadayoni, N. Thota, I. Yue, N. Do, in IEEE ICMTS (2013), pp. 192–194
22.
go back to reference Y. Tkachev, X. Liu, A. Kotov, in IEEE Transactions on Electron Devices, vol. 59, no. 1 (2012), pp. 5–11 Y. Tkachev, X. Liu, A. Kotov, in IEEE Transactions on Electron Devices, vol. 59, no. 1 (2012), pp. 5–11
23.
24.
go back to reference J. Van Houdt, P. Heremans, L. Deferm, G. Groeseneken, and H. Maes, in IEEE Transactions on Electron Devices, vol. 39 (1992), pp. 1150–1156 J. Van Houdt, P. Heremans, L. Deferm, G. Groeseneken, and H. Maes, in IEEE Transactions on Electron Devices, vol. 39 (1992), pp. 1150–1156
25.
go back to reference A. Kotov, Leading Edge Embedded Non Volatile Memories (2015) A. Kotov, Leading Edge Embedded Non Volatile Memories (2015)
26.
go back to reference V. Markov, K. Korablev, A. Kotov, X. Liu, Y. B. Jia, T. N. Dang, A. Levi, in IIRW Final Report (2007), pp. 43–47 V. Markov, K. Korablev, A. Kotov, X. Liu, Y. B. Jia, T. N. Dang, A. Levi, in IIRW Final Report (2007), pp. 43–47
27.
go back to reference V. Markov, A. Kotov, IEEE Trans. on Device and Materials Reliability, vol. 14, no. 2 (2014) pp. 672–680 V. Markov, A. Kotov, IEEE Trans. on Device and Materials Reliability, vol. 14, no. 2 (2014) pp. 672–680
28.
go back to reference V. Markov, J. Kim, A. Kotov, in Proceedings of the IEEE IMW (2016), pp. 21–24 V. Markov, J. Kim, A. Kotov, in Proceedings of the IEEE IMW (2016), pp. 21–24
29.
go back to reference A. Kotov, in MRS 2015 Fall Meeting, Symposium KK: Materials and Technology for Non-Volatile Memories (2015) A. Kotov, in MRS 2015 Fall Meeting, Symposium KK: Materials and Technology for Non-Volatile Memories (2015)
30.
go back to reference Y.K Lee, B. Seo, T-K Yu, B. Lee, E. Kim, C. Jeon, W. Park, Y. Kim, D. Lee, H. Lee, S. Cho, in IEEE IMW (2014), pp. 75–78 Y.K Lee, B. Seo, T-K Yu, B. Lee, E. Kim, C. Jeon, W. Park, Y. Kim, D. Lee, H. Lee, S. Cho, in IEEE IMW (2014), pp. 75–78
31.
go back to reference L.Q. Luo, Z.Q. Teo, Y.J. Kong, F.X. Deng, J.Q. Liu, F. Zhang, X.S. Cai, K.Y. Lim, P. Khoo, S.M. Jung, S.Y. Siah, D. Shum, C.M. Wang, J.C. Xing, G.Y. Liu, L. Tee, S.M. Lemke, P. Ghazavi, X. Liu, N. Do, in IEEE IMW (2016), pp. 149–152 L.Q. Luo, Z.Q. Teo, Y.J. Kong, F.X. Deng, J.Q. Liu, F. Zhang, X.S. Cai, K.Y. Lim, P. Khoo, S.M. Jung, S.Y. Siah, D. Shum, C.M. Wang, J.C. Xing, G.Y. Liu, L. Tee, S.M. Lemke, P. Ghazavi, X. Liu, N. Do, in IEEE IMW (2016), pp. 149–152
32.
go back to reference T. Kono, T. Ito, T. Tsuruda, T. Nishiyama, T. Nagasawa, T. Ogawa, Y. Kawashima, H. Hidaka, T. Yamauchi, in IEEE ISSCC (2013), pp. 212–214 T. Kono, T. Ito, T. Tsuruda, T. Nishiyama, T. Nagasawa, T. Ogawa, Y. Kawashima, H. Hidaka, T. Yamauchi, in IEEE ISSCC (2013), pp. 212–214
33.
go back to reference Y. Taito, M. Nakano, H. Okimoto, D. Odaka, T. Ito, T. Kono, K. Noguchi, H. Hidaka, T. Yamauchi, in IEEE ISSCC (2015), pp. 132–134 Y. Taito, M. Nakano, H. Okimoto, D. Odaka, T. Ito, T. Kono, K. Noguchi, H. Hidaka, T. Yamauchi, in IEEE ISSCC (2015), pp. 132–134
34.
go back to reference D. Shum, J.R. Power, R. Ullmann, E. Suryaputra, K. Ho, J. Hsiao, C.H. Tan, W. Langheinrich, C. Bukethal, V. Pissors, G. Tempel, M. Rohrich, A. Gratz, A. Iserhagen, E.O. Andersen, S. Paprotta, W. Dickenscheid, R. Strenz, R. Duschl, T. Kern, C.T. Hsieh, in IEEE IMW (2012), pp. 139–142 D. Shum, J.R. Power, R. Ullmann, E. Suryaputra, K. Ho, J. Hsiao, C.H. Tan, W. Langheinrich, C. Bukethal, V. Pissors, G. Tempel, M. Rohrich, A. Gratz, A. Iserhagen, E.O. Andersen, S. Paprotta, W. Dickenscheid, R. Strenz, R. Duschl, T. Kern, C.T. Hsieh, in IEEE IMW (2012), pp. 139–142
35.
go back to reference S.T. Kang, B. Winstead, J. Yater, M. Suhail, G. Zhang, C.-M. Hong, H. Gasquet, D. Kolar, J. Shen, B. Min, K. Loiko, A. Hardell, E. Lepore, R. Parks, R. Syzdek, S. Williams, W. Malloch, G. Chindalore, Y. Chen, Y. Shao, L. Huajun, L. Louis, S. Chaw, in IEEE IMW (2012), pp. 131–134 S.T. Kang, B. Winstead, J. Yater, M. Suhail, G. Zhang, C.-M. Hong, H. Gasquet, D. Kolar, J. Shen, B. Min, K. Loiko, A. Hardell, E. Lepore, R. Parks, R. Syzdek, S. Williams, W. Malloch, G. Chindalore, Y. Chen, Y. Shao, L. Huajun, L. Louis, S. Chaw, in IEEE IMW (2012), pp. 131–134
36.
go back to reference G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo, in IEEE IRPS (2016), pp. 5A-4 G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo, in IEEE IRPS (2016), pp. 5A-4
37.
go back to reference A. Baiano, M.V. Duuren, E.V. D. Vegt, B. Schippers, R. Beurze, D.T. Mofrad, H.V. Zwol, Y. Chen, J. Chiang, H. Lokker, K.V. Dijk, J. Verbree, Y.N. Chen, J. Garbe, R. Verhaar, D. Dormans, in IEEE IMW (2015), pp. 173–176 A. Baiano, M.V. Duuren, E.V. D. Vegt, B. Schippers, R. Beurze, D.T. Mofrad, H.V. Zwol, Y. Chen, J. Chiang, H. Lokker, K.V. Dijk, J. Verbree, Y.N. Chen, J. Garbe, R. Verhaar, D. Dormans, in IEEE IMW (2015), pp. 173–176
38.
go back to reference K. Ramkumar, I. Kouznesov, V. Prabhakar, K. Shakeri, X. Yu, Y. Yang, L. Hinh, S. Lee, S. Samanta, H. M. Shih, S. Geha, in IEEE IMW (2013), pp. 199–202 K. Ramkumar, I. Kouznesov, V. Prabhakar, K. Shakeri, X. Yu, Y. Yang, L. Hinh, S. Lee, S. Samanta, H. M. Shih, S. Geha, in IEEE IMW (2013), pp. 199–202
39.
go back to reference J. Chang, in Leading Edge Embedded Non Volatile Memories (2015) J. Chang, in Leading Edge Embedded Non Volatile Memories (2015)
40.
go back to reference C. Su, H. Tran, M. Tadayoni, N. Do, J. Yang, Method of making embedded memory device with silicon-on-insulator substrate, U.S. patent 9,431,407, 30 Aug 2016 C. Su, H. Tran, M. Tadayoni, N. Do, J. Yang, Method of making embedded memory device with silicon-on-insulator substrate, U.S. patent 9,431,407, 30 Aug 2016
41.
go back to reference N. Do, in Leading Edge Embedded Non Volatile Memories (2015) N. Do, in Leading Edge Embedded Non Volatile Memories (2015)
42.
go back to reference V. Tiwari, in Flash Memory Summit 2015—Driving Down the Memory Lane V. Tiwari, in Flash Memory Summit 2015—Driving Down the Memory Lane
43.
go back to reference D. Fan, C. Chen, P. Tuntasood, Flash memory cells with separated self-aligned select and erase gates, and process of fabrication, U.S. patent 6,747,310, 8 June 2004 D. Fan, C. Chen, P. Tuntasood, Flash memory cells with separated self-aligned select and erase gates, and process of fabrication, U.S. patent 6,747,310, 8 June 2004
44.
go back to reference H. Tran, A. Ly, H. Nguyen, T. Vu, Array and pitch of non-volatile memory cells, U.S. patent 7,839,682, 23 Nov 2010 H. Tran, A. Ly, H. Nguyen, T. Vu, Array and pitch of non-volatile memory cells, U.S. patent 7,839,682, 23 Nov 2010
45.
go back to reference H. Tran, S. Nguyen, H. Nguyen, Sense amplifier for low voltage high speed sensing, U.S. patent 7,616,028, 10 Nov 2009 H. Tran, S. Nguyen, H. Nguyen, Sense amplifier for low voltage high speed sensing, U.S. patent 7,616,028, 10 Nov 2009
Metadata
Title
Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability
Authors
Nhan Do
Hieu Van Tran
Alex Kotov
Vipin Tiwari
Copyright Year
2018
DOI
https://doi.org/10.1007/978-3-319-55306-1_5