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Journal of Materials Science

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29-05-2018 | Electronic materials

Spontaneous room-temperature formation of broccoli-like Ag–GeTe nanostructures assisting filamentary resistive switching

Authors: Yusuke Imanishi, Hitoshi Hayashi, Toshihiro Nakaoka

Published in: Journal of Materials Science | Issue 17/2018

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Abstract

We report on a novel fabrication of nanostructures of silver (Ag) germanium telluride (GeTe) at room temperature and the control of resistive switching using them. We systematically fabricated Ag seed nanoparticles of various sizes by thermal annealing and demonstrated that deposition of GeTe by RF sputtering onto the Ag seed nanoparticles spontaneously produced nanostructures including broccoli-like, hollow nanostructures comprised predominantly of nanocrystalline grains of Ag, Ag₃Ge, Ag₂Te, and Ag₅Te₃. The nanostructure shape and the constituent crystalline phases depend on the amount of Ag used for the seeds. The nanostructure formation followed nanoscale phase separation and crystallization into an unexpected phase from the phase diagram, including a metastable state. The structural changes were characteristic of the Ag nanoparticles; no significant structural changes occurred for GeTe deposition onto Ag films. As an application of the spontaneously formed nanostructures, we demonstrated a control resistive switching when a voltage was applied with a lateral Ag electrode pair deposited onto the top. We found that the Ag amount used for the seed formation determined the polarity of resistive switching and the SET/RESET voltages. By increasing the Ag amount, the resistive switching turned from the clockwise direction to the counter-clockwise direction, and the SET/RESET voltages were lowered.

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Bruns G, Merkelbach P, Schlockermann C, Salinga M, Wuttig M, Happ TD, Philipp JB, Kund M (2010) Nanosecond switching in GeTe phase change memory cells. Appl Phys Lett 95(4):043108-1–043108-3. https://doi.org/10.1063/1.3191670

Perniola L, Sousa V, Fantini A et al (2010) Electrical behavior of phase-change memory cells based on GeTe. IEEE Electron Device Lett 31(5):488–490. https://doi.org/10.1109/LED.2010.2044136 CrossRef

Nguyen TA, Backes D, Singh A et al (2016) Topological states and phase transitions in Sb2Te3–GeTe multilayers. Sci Rep 6:27716-1–27716-6. https://doi.org/10.1038/srep27716

Takagaki Y, Saito Y, Tominaga J (2016) Manipulation of the presence of helical surface states of topological insulators using Sb2Te3–GeTe superlattices. Appl Phys Lett 108(11):112102-1–112102-5. https://doi.org/10.1063/1.4944050 CrossRef

Ramesh K, Asokan S, Sangunni KS, Gopal ESR (1999) Electrical switching in germanium telluride glasses doped with Cu and Ag. Appl Phys A 69(4):421–425. https://doi.org/10.1007/s003390051025 CrossRef

Kim CJ, Yoon SG, Choi KJ, Ryu SO, Yoon SM, Lee NY, Yu BG (2006) Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory. J Vac Sci Tech B 24(2):721–724. https://doi.org/10.1116/1.2180260 CrossRef

Lee SJ, Yoon SG, Choi KJ, Ryu SO, Yoon SM, Lee NY, Yu BG (2006) Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications. J Vac Sci Tech B 24(5):2312–2316. https://doi.org/10.1116/1.2348884 CrossRef

Xu H, Liu Z, Xia Y, Chen L, Zhu H, Guo H, Yin J (2011) Phase change behavior in Ag₁₀Ge₁₅Te₇₅ and the electrolytic resistive switching in both amorphous and crystalline Ag₁₀Ge₁₅Te₇₅ films. Electrochem Solid-State Lett 14(2):H99–H102. https://doi.org/10.1149/1.3523222 CrossRef

Xu L, Li Y, Yu NN, Zhong YP, Miao XS (2015) Local order origin of thermal stability enhancement in amorphous Ag doping GeTe. Appl Phys Lett 106(3):031904-1–031904-5. https://doi.org/10.1063/1.4906332

10.

Kumar P, Chander R, Sathiaraj TS, Thangaraj R (2015) Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films. Mater Sci Semicond Process 38:188–191. https://doi.org/10.1016/j.mssp.2015.04.027 CrossRef

11.

Hasegawa T, Terabe K, Tsuruoka T, Aono M (2012) Atomic switch: atom/ion movement controlled devices for beyond Von-Neumann computers. Adv Mater 24(2):252–267. https://doi.org/10.1002/adma.201102597 CrossRef

12.

Valov I, Waser R, Jameson JR, Kozicki MN (2011) Electrochemical metallization memories—fundamentals, applications, prospects. Nanotechnology 22(25):254003-1–254003-22. https://doi.org/10.1088/0957-4484/22/25/254003 CrossRef

13.

Waser R, Dittmann R, Staikov G, Szot K (2009) Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv Mater 21:2632–2663. https://doi.org/10.1002/adma.200900375 CrossRef

14.

Barbera SL, Vuillaume D, Alibart F (2015) Filamentary switching: synaptic plasticity through device volatility. ACS Nano 9:941–949. https://doi.org/10.1021/nn506735m CrossRef

15.

Li Y, Zhong Y, Zhang J, Xu L, Wang Q, Sun H, Tong H, Cheng X, Miao X (2014) Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems. Sci Rep 4:4906-1–4906-7. https://doi.org/10.1038/srep04906

16.

Kanehira T, Imanishi Y, Hayashi H, Nakaoka T (2016) Harmonic multiplication based on Ge–Sb–Te resistive switching devices. Elect Lett 52:1811–1833. https://doi.org/10.1049/el.2016.2016 CrossRef

17.

Srinivasan B, Gautier R, Gucci F et al (2017) Impact of coinage metal insertion on the thermoelectric properties of GeTe solid-state solutions. J Phys Chem C 122:227–235. https://doi.org/10.1021/acs.jpcc.7b10839 CrossRef

18.

Gonçalves AP, Lopes EB, Rouleau O, Godart C (2010) Conducting glasses as new potential thermoelectric materials: the Cu–Ge–Te case. J Mater Chem 20:1516–1521. https://doi.org/10.1039/b908579c CrossRef

19.

Srinivasan B, Boussard-Pledel C, Dorcet V et al (2017) Thermoelectric properties of highly-crystallized Ge–Te–Se glasses doped with Cu/Bi. Materials 10:328-1–328-14. https://doi.org/10.3390/ma10040328 CrossRef

20.

Wood C (1988) Materials for thermoelectric energy conversion. Rep Prog Phys 51(4):459–539. https://doi.org/10.1088/0034-4885/51/4/001 CrossRef

21.

Snyder GJ, Toberer ES (2008) Complex thermoelectric materials. Nat Mater 7(2):105–114. https://doi.org/10.1038/nmat2090 CrossRef

22.

Levin EM, Besser MF, Hanus R (2013) Electronic and thermal transport in GeTe: a versatile base for thermoelectric materials. J Appl Phys 114(8):083713-1–083713-9. https://doi.org/10.1063/1.4819222 CrossRef

23.

Perumal S, Roychowdhury S, Biswas K (2016) High performance thermoelectric materials and devices based on GeTe. J Mater Chem C 4(32):7520–7536. https://doi.org/10.1039/C6TC02501C CrossRef

24.

Caldwell MA, Raoux S, Wang RY, Wong HSP, Milliron DJ (2010) Synthesis and size-dependent crystallization of colloidal germanium telluride nanoparticles. J Mater Chem 20(7):1285–1291. https://doi.org/10.1039/B917024C CrossRef

25.

Arachchige IU, Soriano R, Malliakas CD, Ivanov SA, Kanatzidis MG (2011) Amorphous and Crystalline GeTe Nanocrystals. Adv Funct Mater 21(14):2737–2743. https://doi.org/10.1002/adfm.201100633 CrossRef

26.

Ovik R, Long BD, Barma MC, Riaz M, Sabri MFM, Said SM, Saidur R (2016) A review on nanostructures of high-temperature thermoelectric materials for waste heat recovery. Renew Sustain Energy Rev 64:635–659. https://doi.org/10.1016/j.rser.2016.06.035 CrossRef

27.

Yang SH, Zhu TJ, Sun T, He J, Zhang SN, Zhao XB (2008) Nanostructures in high-performance (GeTe)_x(AgSbTe₂)_100−x thermoelectric materials. Nanotechnology 19(24):245707-1–245707-5. https://doi.org/10.1088/0957-4484/19/24/245707 CrossRef

28.

Kim H-S, Dharmaiah P, Madavali B et al (2017) Large-scale production of (GeTe)_x(AgSbTe₂)_100−x (x = 75, 80, 85, 90) with enhanced thermoelectric properties via gas-atomization and spark plasma sintering. Acta Mater 128:43–53. https://doi.org/10.1016/j.actamat.2017.01.053 CrossRef

29.

Schröder T, Rosenthal T, Giesbrecht N, Nentwig M (2014) Nanostructures in Te/Sb/Ge/Ag (TAGS) thermoelectric materials induced by phase transitions associated with vacancy ordering. Inorg Chem 53(14):7722–7729. https://doi.org/10.1021/ic5010243 CrossRef

30.

Guan W, Long S, Jia R, Liu M (2007) Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 91(6):062111-1–062111-3. https://doi.org/10.1063/1.2760156 CrossRef

31.

Liu Q, Long S, Wang W et al (2010) Low-power and highly uniform switching in-based ReRAM with a Cu nanocrystal insertion layer. IEEE Electron Device Lett 31(11):1299–1301. https://doi.org/10.1109/LED.2010.2070832

32.

Chang WY, Cheng KJ, Tsai JM, Chen HJ, Chen F, Tsai MJ, Wu TB (2009) Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals. Appl Phys Lett 95(4):042104-1–042104-3. https://doi.org/10.1063/1.3193656

33.

Yang SH, Zhu TJ, Zhang SN, Shen JJ, Zhao XB (2010) Natural microstructure and thermoelectric performance of (GeTe)₈₀(Ag_ySb_2−yTe_3−y)₂₀. J Electron Mater 39(9):2127–2131. https://doi.org/10.1007/s11664-009-0993-y CrossRef

34.

Chen Y, He B, Zhu TJ, Zhao XB (2012) Thermoelectric properties of non-stoichiometric AgSbTe₂ based alloys with a small amount of GeTe addition. J Phys D Appl Phys 45(11):115302-1–115302-5. https://doi.org/10.1088/0022-3727/45/11/115302 CrossRef

35.

Kusz B, Miruszewski T, Bochentyn B, Łapiński M, Karczewski J (2016) Structure and thermoelectric properties of Te–Ag–Ge–Sb (TAGS) materials obtained by reduction of melted oxide substrates. J Electron Mater 45(2):1085–1093. https://doi.org/10.1007/s1166 CrossRef

36.

Sadia Y, Ohaion-Raz T, Ben-Yehuda O, Korngold M, Gelbstein Y (2016) Criteria for extending the operation periods of thermoelectric converters based on IV–VI compounds. J Solid State Chem 241:79–85. https://doi.org/10.1016/j.jssc.2016.06.006 CrossRef

37.

Polking MJ, Urban JJ, Milliron DJ et al (2011) Size-dependent polar ordering in colloidal GeTe nanocrystals. Nano Lett 11(3):1147–1152. https://doi.org/10.1021/nl104075v CrossRef

38.

Lee SH, Ko DK, Jung Y, Agarwal R (2006) Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires. Appl Phys Lett 89(22):223116-1–223116-3. https://doi.org/10.1063/1.2397558

39.

Sun X, Yu B, Ng G, Meyyappan M (2007) One-dimensional phase-change nanostructure: germanium telluride nanowire. J Phys Chem C 111(6):2421–2425. https://doi.org/10.1021/jp0658804 CrossRef

40.

Taneja P, Banerjee R, Ayyub P, Dey GK (2001) Observation of a hexagonal (4H) phase in nanocrystalline silver. Phys Rev B 64(3):033405-1–033405-4. https://doi.org/10.1103/PhysRevB.64.033405 CrossRef

41.

Nakaoka T, Satoh H, Honjo S, Takeuchi H (2012) First-sharp diffraction peaks in amorphous GeTe and Ge₂Sb₂Te₅ films prepared by vacuum-thermal deposition. AIP Adv 2(4):042189-1–042189-6. https://doi.org/10.1063/1.4773329 CrossRef

42.

Imanishi Y, Kida S, Nakaoka T (2016) Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films. AIP Adv 6(7):075003-1–075003-8. https://doi.org/10.1063/1.4958633 CrossRef

43.

Karakaya I, Thompson WT (1991) The Ag–Te (silver–tellurium) system. J Phase Equilib 12:56–63CrossRef

44.

Ojha SN (2001) Metastable phase formation during solidification of undercooled melt. Mater Sci Eng A 304–306:114–118. https://doi.org/10.1016/S0921-5093(00)01466-0 CrossRef

45.

Pandey OP, Ojha SN, Lele S (1997) Thermodynamic analysis of Ag₃Ge phase formation. J Mater Sci Technol 13(6):524–526

46.

Zhang X, Chen Z, Lin S, Zhou B, Gao B, Pei Y (2017) Promising thermoelectric Ag_5−δTe₃ with intrinsic low lattice thermal conductivity. ACS Energy Lett 2(10):2470–2477. https://doi.org/10.1021/acsenergylett.7b00813 CrossRef

47.

Fujikane M, Kurosaki K, Muta H, Yamanaka S (2005) Electrical properties of α- and β-Ag₂Te. J Alloys Compd 387:297–299. https://doi.org/10.1016/j.jallcom.2004.06.054 CrossRef

48.

Theye ML, Van VN, Fisson S (1983) Validity of the free-electron model for Ag–Ge and Au–Ge amorphous metallic alloys. Philos Mag B 47:31–50. https://doi.org/10.1080/01418638308226782 CrossRef

Title: Spontaneous room-temperature formation of broccoli-like Ag–GeTe nanostructures assisting filamentary resistive switching
Authors: Yusuke Imanishi
Hitoshi Hayashi
Toshihiro Nakaoka
Publication date: 29-05-2018
Publisher: Springer US
Published in: Journal of Materials Science / Issue 17/2018
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-018-2493-z

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