Stacking pattern effect on the energy storage performance of PLZT-based relaxor-ferroelectric/antiferroelectric multilayer thin film capacitors prepared by sol–gel methods

The article delves into the energy storage performance of PLZT-based multilayer thin film capacitors, focusing on the effects of stacking patterns and layer thicknesses. It begins by discussing the importance of dielectric thin films in micro-scale energy storage devices, highlighting the need to improve recoverable energy storage density and efficiency. The study investigates various stacking patterns of relaxor ferroelectric (RFE) and antiferroelectric (AFE) layers, prepared using the sol–gel/spin-coating method. The results show that the stacking pattern significantly influences the energy storage performance, with the (RA)2 configuration achieving an energy storage density of 26.28 J/cm³. The article also explores the impact of layer thickness on the dielectric features and energy storage properties, providing insights into the trade-offs between interface density and energy loss. Additionally, the study examines the reliability and stability of the multilayer thin films, demonstrating their potential for pulsed power applications. The conclusion emphasizes the importance of designing optimal stacking patterns to enhance energy storage performance, offering valuable guidelines for future research and development in this field.