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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 23/2018

08-10-2018

Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature

Authors: Junzhan Zhang, Weichao Wang, Dan Liu, Ying Zhang, Peng Shi

Published in: Journal of Materials Science: Materials in Electronics | Issue 23/2018

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Abstract

Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.
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Metadata
Title
Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature
Authors
Junzhan Zhang
Weichao Wang
Dan Liu
Ying Zhang
Peng Shi
Publication date
08-10-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 23/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0158-y

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