Structural, morphological, optical, and electrical properties of SbxSey films with different compositions grown by Chemical-molecular beam deposition method from Separate Sb and Se precursors

This study delves into the synthesis and characterization of Sb x Se y thin films deposited via chemical-molecular beam deposition at a substrate temperature of 450 °C. The focus is on how varying Sb/Se ratios influence the films' structural, morphological, optical, and electrical properties. Key findings include the shift toward stoichiometric Sb 2 Se 3 (Sb/Se=0.66) with increasing selenium content, as confirmed by EDS analysis. SEM and AFM reveal that higher Sb content leads to non-uniform grain distribution and increased surface roughness, while stoichiometric compositions show denser and more uniform morphologies. XRD and Raman spectroscopy confirm the presence of orthorhombic Sb 2 Se 3 phases, with peak intensities enhancing as selenium content increases. Optical analysis reveals bandgap values between 1.07 and 1.26 eV, with the highest bandgap corresponding to the stoichiometric ratio. Electrical measurements indicate a transition from p-type to n-type conductivity at Sb/Se=0.77, with conductivity increasing sharply in Sb-rich compositions. The study concludes that precise selenium control during deposition is crucial for tailoring the properties of Sb x Se y thin films, offering valuable insights for optimizing their performance in optoelectronic applications such as solar cells and sensors.