Study on Temperature-Dependent Photoresponsivity and Stability of Mid-Infrared Photodetector Based on Si-Process-Compatible Plasmonic PtSi/p-Si Schottky Structure

The mid-infrared (MIR) spectral range is pivotal for biomedical and chemical sensing due to the absorption bands of various chemical and biological molecules. Traditional MIR photodetectors, often made from compound semiconductors like mercury cadmium telluride (HgCdTe), face challenges with temperature instability and complex fabrication processes. This article presents a detailed study on a PtSi/p-Si-based Schottky MIR photodetector, which offers compatibility with standard semiconductor fabrication processes and enhanced thermal stability. The research examines the device's temperature-dependent performance, focusing on dark current, photosensitivity, and specific detectivity. Key findings include the device's stable photosensitivity at high temperatures, minimal shift in peak responsivity, and a small decrease in specific detectivity with increasing temperature. The study also explores the device's reliability and repeatability through multiple ON/OFF switching measurements, demonstrating its potential for long-term stable sensing applications. The investigation provides a comprehensive analysis of the PtSi/p-Si photodetector's performance, offering valuable insights into developing temperature-resilient MIR photodetectors for various sensing technologies.