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30-06-2022 | Ceramics

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoO_x thin films

Authors: Chen Wang, Chun-Hui Bao, Wan-Yu Wu, Chia-Hsun Hsu, Ming-Jie Zhao, Xiao-Ying Zhang, Shui-Yang Lien, Wen-Zhang Zhu

Published in: Journal of Materials Science | Issue 26/2022

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Abstract

Molybdenum oxide (MoO_x) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)₆ precursor and O₂ plasma reactant in a substrate temperature range of 150–275 °C. The effect of substrate temperature on the chemical, optical, surface morphological, and structural properties of the MoO_x thin films was explored systematically. The substrate temperature performed a significant role in depositing MoO_x films and three kinds of different precursor reaction mechanisms of PEALD-MoO_x thin films handled by substrate temperature were presented firstly and illustrated comprehensively. The growth of amorphous MoO_x film was observed between 150 and 175 °C. Moreover, an obvious transition to polycrystalline deposition was demonstrated for the deposition temperatures at 225 °C and higher. Both Mo⁶⁺ and Mo⁵⁺ valence states existed in all prepared MoO_x films, which inferred the deficient lattice oxygen in the films. And the proportion of non-lattice oxygen reduced with the increasing deposition temperature. The elaboration of deposition mechanism of PEALD-MoO_x films provides a guideline for the preparation of high-quality MoO_x films.

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Title: Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films
Authors: Chen Wang
Chun-Hui Bao
Wan-Yu Wu
Chia-Hsun Hsu
Ming-Jie Zhao
Xiao-Ying Zhang
Shui-Yang Lien
Wen-Zhang Zhu
Publication date: 30-06-2022
Publisher: Springer US
Published in: Journal of Materials Science / Issue 26/2022
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-022-07427-x

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