Advertisement
Published in:
01-06-2015
Super-threshold semi analytical channel potential model for DG tunnel FET
Published in: Journal of Computational Electronics | Issue 2/2015
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
In this paper, we present a physics based semi-analytical model for channel potential of symmetric double gate tunnel field effect transistor (TFET). The analytical results are compared with TCAD Sentaurus simulated data. We have used a fitting parameter \(\lambda \), which represents the screening length (or Debye length) of the device, in this work this fitting parameter is studied with the help of rigorous simulations. This fitting parameter will determine the I–V characteristics of the TFET device, therefore we also tried to show its behavior with changes in applied gate and drain voltages. To show the robustness of our model the results with variations in channel length and film thickness are also presented with simulated results. This model gives the RMS residual error within 0.8–5.0 % and asymptotic standard error for \(\lambda \) within 0–4.0 % and works well for \(L_{g}\le 150\) nm and \(T_{si}\ge 8\) nm.