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Semiconductors
Published in: Semiconductors 9/2018

01-09-2018 | SURFACES, INTERFACES, AND THIN FILMS

Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser

Author: P. S. Shkumbatjuk

Published in: Semiconductors | Issue 9/2018

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Abstract

The effect of the continuous radiation of a CO2 laser on a cleaved (110) CdTe surface is investigated. It is shown based on an analysis of the morphology of the irradiating and irradiated surface that the formation of observed defects is caused by the evaporation of CdTe in the dislocation region.
previous article Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals
next article Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

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Literature
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A. Baidulaeva, B. M. Bulakh, B. K. Dauletmuratov, B. R. Dzhumaev, N. E. Korsunskaya, P. E. Mozol’, and G. Garyagdyev, Sov. Phys. Semicond. 26, 450 (1992).
Metadata
Title
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser
Author
P. S. Shkumbatjuk
Publication date
01-09-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 9/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618090178

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