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Journal of Materials Science: Materials in Electronics

Suppression of afterglow in RbI:Tl scintillator by co-doping

  • 01-05-2023
Published in:
Authors
Keiichiro Miyazaki
Daisuke Nakauchi
Takumi Kato
Noriaki Kawaguchi
Takayuki Yanagida
Published in
Journal of Materials Science: Materials in Electronics | Issue 13/2023

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Abstract

The article delves into the optimization of RbI:Tl scintillators by co-doping with elements such as Sb, Bi, Sm, and Yb to suppress afterglow and enhance light yield. Through detailed experimental methods and results, it compares the scintillation properties of these co-doped samples, highlighting the significant reduction in afterglow and improvement in light yield, particularly with Sb co-doping. The findings offer promising insights into enhancing the performance of scintillators in various applications, making it a valuable read for specialists in the field.
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previous article Synthesis of zinc oxide based nitrogen doped graphene oxide with polyaniline (ZnO/N-GO/PANI) flow electrode for desalination application using flow capacitive deionization
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Title
Suppression of afterglow in RbI:Tl scintillator by co-doping
Authors
Keiichiro Miyazaki
Daisuke Nakauchi
Takumi Kato
Noriaki Kawaguchi
Takayuki Yanagida
Publication date
01-05-2023
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 13/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-10517-4
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