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Microsystem Technologies
Published in: Microsystem Technologies 1/2015

01-01-2015 | Technical Paper

Suspended high Q integrated inductor by wafer level packaging technology

Authors: M. Han, S. F. Wang, G. W. Xu, Le Luo

Published in: Microsystem Technologies | Issue 1/2015

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Abstract

A novel integrated passive devices fabrication technique which combines wafer level packaging and bulk Si etching technologies to prepare silicon based suspended inductors with high quality factor (Q) is presented. Inductors based on copper/benzocyclobutene and copper/polyimide structures are fabricated with two-step back-etching technology on low resistive silicon wafer. The characteristics of 3-turn spiral inductors are investigated. The measured Q of 6.8 nH suspended inductors are 29.3 at 2.4 GHz and 20.6 at 5 GHz while the Q of the others without suspended are 11.0 at 2.4 GHz and 4.4 at 5 GHz, respectively. This technique can significantly improve the performance in high frequency range and has a wide application in hand-held RF module.
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Literature
Gu L et al (2007) Concave-suspended high-Q solenoid inductors with a post-CMOS MEMS process in standard silicon wafers. IEEE Int Conf Microelectromech Syst Tech Dig 771–774
Jeong I et al (2003) High performance RF integrated passive devices on thick oxide substrate using Cu–BCB process. Microw Opt Technol Lett 37(1):49–52CrossRef
Topper M, Fischer T et al (2010) A comparison of thin film polymers for wafer level packaging. In: electronic components and technology conference, pp 295–302
Zoschke K et al (2007) Fabrication of application specific integrated passive devices using wafer level packaging technologies. IEEE Trans Adv Packag 30(3):359–368CrossRef
Zoschke K et al (2010) Wafer level processing of integrated passive components using polyimide or polybenzoxazole/copper multilayer technology. IEEE Trans Adv Packag 33(2):398–407CrossRef
Metadata
Title
Suspended high Q integrated inductor by wafer level packaging technology
Authors
M. Han
S. F. Wang
G. W. Xu
Le Luo
Publication date
01-01-2015
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 1/2015
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-013-2010-x

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