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Journal of Electronic Materials
Published in: Journal of Electronic Materials 7/2020

13-04-2020

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Authors: Baskaran Subramanian, Mohanbabu Anandan, Saminathan Veerappan, Murugapandiyan Panneerselvam, Mohammed Wasim, Saravana Kumar Radhakrishnan, Praveen Pechimuthu, Yogesh Kumar Verma, Subash Navaneethan Vivekanandhan, Elamurugan Raju

Published in: Journal of Electronic Materials | Issue 7/2020

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previous article Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance
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Metadata
Title
Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
Authors
Baskaran Subramanian
Mohanbabu Anandan
Saminathan Veerappan
Murugapandiyan Panneerselvam
Mohammed Wasim
Saravana Kumar Radhakrishnan
Praveen Pechimuthu
Yogesh Kumar Verma
Subash Navaneethan Vivekanandhan
Elamurugan Raju
Publication date
13-04-2020
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 7/2020
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-020-08113-x

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