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Journal of Computational Electronics
Published in:

06-09-2024

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate

Authors: Rongxing Cao, Hanxun Liu, Kejia Wang, Dike Hu, Yiyuan Wang, Xianghua Zeng, Yuxiong Xue

Published in: Journal of Computational Electronics | Issue 6/2024

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Abstract

The synergistic effect of total ionizing dose on single event gate rupture (SEGR) was simulated in the vertical double diffusion metal oxide semiconductor device with SiO2–Si3N4 stacked gate layer. In comparison to the device with a single SiO2 gate layer, the synergistic effect was revealed to be suppressed in the device with SiO2–Si3N4 stacked layer. The mechanism is that the oxide layer is a sensitive area of the SEGR effect. Compared with the single SiO2 layer, the superposition of the additional electric field formed by the trapped holes in the sensitive area of the stacked layer leads to a decrease in the sensitivity of the synergistic effect, which is more obvious with increasing the volume of the Si3N4 layer.
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Metadata
Title
Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate
Authors
Rongxing Cao
Hanxun Liu
Kejia Wang
Dike Hu
Yiyuan Wang
Xianghua Zeng
Yuxiong Xue
Publication date
06-09-2024
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 6/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02227-9

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