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Synthesis and characterization of La-modified bismuth ferrite: [Bi1 − xLaxFeO3] (x = 0.04, 0.08, and 0.12)

  • 01-11-2025
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Abstract

This article delves into the synthesis and characterization of lanthanum-doped bismuth ferrite, Bi1−xLaxFeO3, with varying concentrations of lanthanum (x = 0.04, 0.08, and 0.12). The study focuses on the structural, dielectric, and impedance properties of the material, highlighting the impact of lanthanum doping on its performance. Key findings include the stabilization of the crystal structure into hexagonal symmetry, improved ferroelectric and ferromagnetic characteristics, and enhanced dielectric properties. The article also explores the potential applications of these materials in spintronics, memory devices, and high-frequency electronics. Additionally, the research provides insights into the conduction mechanisms and relaxation processes within the material, offering a comprehensive understanding of its electrical behavior. The conclusions drawn from the study underscore the significance of lanthanum doping in optimizing the properties of bismuth ferrite for advanced technological applications.

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Title
Synthesis and characterization of La-modified bismuth ferrite: [Bi1 − xLaxFeO3] (x = 0.04, 0.08, and 0.12)
Authors
Sushree Sangita Rout
Sudhansu Sekhar Hota
Pragyan Mohanty
Ram Naresh Prasad Choudhary
Publication date
01-11-2025
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 33/2025
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-025-16144-5
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