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Published in: Journal of Materials Science 1/2018

07-09-2017 | Electronic materials

Synthesis and characterization of tin dioxide thick film modified by APTES in vapor and liquid phases

Authors: Mohamad Hijazi, Valérie Stambouli, Mathilde Rieu, Vincent Barnier, Guy Tournier, Thomas Demes, Jean-Paul Viricelle, Christophe Pijolat

Published in: Journal of Materials Science | Issue 1/2018

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Abstract

Surface functionalization has numerous applications worldwide. Silicon oxide has been a research material of choice. However, tin dioxide (SnO2) films are employed in many applications especially in gas sensors, and little studied in regard to functionalization. Thus, they were chosen to be functionalized via 3-aminopropyltriethoxysilane (APTES). Different synthesis parameters were tested such as APTES grafting by vapor or liquid phases deposition. In liquid, many parameters were investigated: water presence, reaction times, and APTES concentration. The presence and reactivity of grafted amine-terminated film on SnO2 were carried out by Alexa Fluor® molecules. In addition, APTES grafting was characterized using attenuated total reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectrometry techniques. These characterizations showed how synthesis parameters affect the amount and thickness of APTES films. Optimal liquid silanization parameters were determined in order to obtain a saturated SnO2 surface with APTES molecules. Importantly, the addition of 5 vol% H2O to the APTES solution provided denser surface coverage, by hydrolyzing the ethoxy groups to silanol. An almost 50% improvement over anhydrous liquid and vapor methods was obtained.

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Metadata
Title
Synthesis and characterization of tin dioxide thick film modified by APTES in vapor and liquid phases
Authors
Mohamad Hijazi
Valérie Stambouli
Mathilde Rieu
Vincent Barnier
Guy Tournier
Thomas Demes
Jean-Paul Viricelle
Christophe Pijolat
Publication date
07-09-2017
Publisher
Springer US
Published in
Journal of Materials Science / Issue 1/2018
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1541-4

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