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Synthesis and photoelectric properties of TlInS2 nanoflake-doped PVP thin-film photodetectors

  • 01-11-2025
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Abstract

This study delves into the synthesis and characterization of TlInS2 nanoflake-doped PVP thin-film photodetectors, focusing on their structural, optical, and electrical properties. The research demonstrates that incorporating TlInS2 nanoflakes into a PVP matrix significantly enhances the photodetector's performance, achieving a peak responsivity of 0.513 A/W and an external quantum efficiency of 117.1%. The study also highlights the device's superior detectivity and operational stability, making it a promising candidate for next-generation optoelectronic applications. The findings underscore the potential of hybrid polymer-nanoflake systems in advancing low-cost, high-performance photodetectors.

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Title
Synthesis and photoelectric properties of TlInS2 nanoflake-doped PVP thin-film photodetectors
Authors
Yahya Kerem Uçman
Hayriye Gökçen Çetinkaya
Umut Aydemir
Publication date
01-11-2025
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 33/2025
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-025-16161-4
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