Synthesis of Zn-doped lead sulphide by electrodeposition: potential change on structural, morphological, and optical properties

PbS and Zn-doped PbS materials, which have many fields of study, stand out with their applications in electro-optic technology. In this study, pure, 2%, and 4% Zn-doped PbS films annealed at 250 °C annealing temperature were produced on Indium Tin Oxide substrates by electrodeposition method. Structural, optical, and morphological properties of these produced films were examined by broad range analysis methods, and the effect of Zn element doped for various rates on the films was reported. From the structural features of the films specified by X-ray diffraction, it was concluded that all of the films were in polycrystalline structure. The thickness of the films and the parameters defining some optical properties (extinction coefficient and refractive index) were stated by spectroscopic ellipsometer. The thickness values ranged between 245 and 232 nm. According to the measurements determined by the optical method, it was found that the optical band gaps of all the films were between 1.95 eV and 2.07 eV. The transmittance values of the films at the visible wavelength (400–700 nm) were determined as low. The surface morphologies and elemental analyses of the films were obtained by Scanning Electron Microscopy and Energy-Dispersive X-ray Spectroscopy, respectively. As a result of the investigations, it was concluded that the Zn dopant had a healing effect on the structural, optical, and surface properties of the films.