Tailored deep blue OLEDs characteristics with doping engineering in fluorescent dyes based on DMPPP: towards manufacturable solid-state lighting building blocks

We report on a deep blue OLED paradigm where the typical electrical and optical characteristics can be tailored with doping engineering. The devices are fabricated with a representative structure of ITO/m-MTDATA (20 nm) NPB (10 nm)/DMPPP:BCzVBi (d nm, x wt%)/Bphen (30 nm)/Cs₂CO₃:Ag₂O (20 wt%, 1 nm)/Al (100 nm). Complementary studies are performed on the properties of deep blue OLEDs with specific doping concentrations (x = 2, 5, 8 and 10) and various doping layer thicknesses (d = 3, 5, 15 and 20). High luminance and efficiency deep blue OLEDs are obtained with tailored energy transfer between the host and the guest in the emissive layer when the x and d was 8 and 15, respectively. The developed device demonstrate a maximum current efficiency of 3.53 cd/A with a maximum luminance of 16,570 cd/m². The CIE coordinates of the device are well within the deep blue region when the voltage is changed from 6 to 11 V. The CIE_x,y is (0.155, 0.128) at the maximum luminance. Our systematic studies and complementary engineering investigations upon highly efficient deep blue OLEDs open new opportunities towards innovative applications in an industrial level available with optimized device integration among performance, dimension and cost in a variety of fields, e.g., flat panel display, smart wearable devices and human–machine interfaces lighting.