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01-11-2017 | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Authors: V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasilnik

Published in: Semiconductors | Issue 11/2017

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Title: Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
Authors: V. Ya. Aleshkin
N. V. Baidus
A. A. Dubinov
K. E. Kudryavtsev
S. M. Nekorkin
A. V. Novikov
A. V. Rykov
I. V. Samartsev
A. G. Fefelov
D. V. Yurasov
Z. F. Krasilnik
Publication date: 01-11-2017
Publisher: Pleiades Publishing
Published in: Semiconductors / Issue 11/2017
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782617110057

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Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

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Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures

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