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Tribology Letters

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01-09-2021 | Original Paper

The Effect of Cu²⁺ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates

Authors: Ping Zhang, Guomei Chen, Zifeng Ni, Yongguang Wang, Kang Teng, Shanhua Qian, Da Bian, Yongwu Zhao

Published in: Tribology Letters | Issue 3/2021

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Abstract

In order to obtain a high material removal rate and good surface quality, the effect of Cu²⁺ ions and glycine complex as a catalyst on the chemical mechanical polishing (CMP) performance of Si-face 6H-SiC substrates was investigated. The results indicated that the slurry with Cu²⁺-glycine complex had a higher material removal rate (MRR) and better surface quality than that without Cu²⁺-glycine complex. The maximum MRR of the Si-face 6H-SiC substrate was 83 nm/h with an average roughness (Ra) of 0.336 nm using the slurry containing 6wt% silica (SiO₂) and 4wt% hydrogen peroxide (H₂O₂) at pH 10. In contrast, when Cu²⁺-glycine complex were added as a catalyst, the maximum MRR was increased to 118 nm/h with Ra of 0.155 nm. The ultraviolet–visible (UV–vis) spectroscopy analysis indicated that the Cu²⁺-glycine complex was an effective catalyst for the decomposition of H₂O₂ to generate more hydroxyl (·OH) radicals. Meanwhile, due to the fact that more softened layer was formed and the SiO₂ abrasive nanoparticles were deeply pressed into the softened layer to produce a plowing action under the polishing pressure, coefficient of friction (COF) was increased by adding the Cu²⁺-glycine complex. Finally, the polishing mechanism of the Si-face 6H-SiC substrates using the Cu²⁺-glycine complex was discussed.

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Title: The Effect of Cu2+ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates
Authors: Ping Zhang
Guomei Chen
Zifeng Ni
Yongguang Wang
Kang Teng
Shanhua Qian
Da Bian
Yongwu Zhao
Publication date: 01-09-2021
Publisher: Springer US
Published in: Tribology Letters / Issue 3/2021
Print ISSN: 1023-8883
Electronic ISSN: 1573-2711
DOI: https://doi.org/10.1007/s11249-021-01468-0

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