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Analysis on Energy Efficiency and Optimization of HIsmelt Process Read chapter Read first chapter

2019 | OriginalPaper | Chapter

The Influence of Phosphorus Dopant on the Structural and Mechanical Properties of Silicon

Authors : Shadia Ikhmayies, Yasemin Ö. Çiftci

Published in: Energy Technology 2019

Publisher: Springer International Publishing

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Abstract

Phosphorus (P) is widely used as n-type dopant for silicon (Si) to form the emitter layer in wafer-based silicon solar cells. The main purpose of this work is to investigate the influence of P doping on the structural and mechanical properties of silicon. CASTEP program, which uses the density functional theory (DFT), with a plane-wave basis, is used to study the structural, electronic, and mechanical properties of undoped and P-doped Si (Si1−xPx for 0.0001 ≤ x ≤ 0.05). The density of states (DOS), band structure, elastic constants, bulk modulus \( \left( B \right) \), Young’s modulus (E), Shear modulus \( \left( G \right) \), and Poisson’s ratio (v) were all calculated. It is found that brittleness of Si increased by P doping.

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previous chapter The Influence of Boron Dopant on the Structural and Mechanical Properties of Silicon: First Principles Study
next chapter Simple and Highly Effective Purification of Metallurgical-Grade Silicon Through Metal-Assisted Chemical Leaching
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Metadata
Title
The Influence of Phosphorus Dopant on the Structural and Mechanical Properties of Silicon
Authors
Shadia Ikhmayies
Yasemin Ö. Çiftci
Copyright Year
2019
Book
Energy Technology 2019

Print ISBN: 978-3-030-06208-8

Electronic ISBN: 978-3-030-06209-5

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-3-030-06209-5_21