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Semiconductors
Published in: Semiconductors 11/2017

01-11-2017 | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

Thermoelectric effects in nanoscale layers of manganese silicide

Published in: Semiconductors | Issue 11/2017

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previous article Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity
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Metadata
Title
Thermoelectric effects in nanoscale layers of manganese silicide
Publication date
01-11-2017
Published in
Semiconductors / Issue 11/2017
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782617110112

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XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

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Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator

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Optical thyristor based on GaAs/InGaP materials

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Optimization of the superlattice parameters for THz diodes

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Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures

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MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

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