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Published in: Optical and Quantum Electronics 11/2017

01-11-2017

Tin-mono-sulfide (SnS) thin films prepared by chemical spray pyrolysis with different [S]/[Sn] ratios

Authors: Thierno Sall, Miguel Mollar, Bernabé Marí

Published in: Optical and Quantum Electronics | Issue 11/2017

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Abstract

SnS thin films were deposited by chemical spray pyrolysis using cost-effective and low-toxicity sources materials like tin (II) chloride dihydrate and thiourea as sources of tin and sulphur, respectively. We have studied the properties of sprayed SnS thin films with [S]/[Sn] ratios were varied from 1 to 4 in order to optimize these parameters. X-ray diffraction was used for analyzing the films structure, Raman Spectroscopy for assessing the films quality and structure, scanning electron microscope (SEM) for surface morphology and energy dispersive energy (EDS) for compositional element in samples, atomic force microscopy (AFM) for the topography of surfaces and optical spectroscopy for measuring transmittances and then deducing the band gap energies. All films obtained are polycrystalline with (111) as preferential direction for films with [S]/[Sn] ratio equals to one while for [S]/[Sn] ratios from 2 to 4 the main peak becomes (101) and the (111) peak decreases in intensity. Raman spectroscopy confirms the presence of only one SnS phase without any additional parasite secondary phases. SEM images revealed that films are well adhered onto glass surface with rounded grain. AFM confirms this result being films with [S]/[Sn] = 1 the roughest and also with the largest grain size. EDS results show an improvement of stoichiometry with the increase of the [S]/[Sn] ratio. From optical analysis, it is inferred that the band gap energy decreases from 1.83 to 1.77 eV when the [S]/[Sn] ratio changes from 2 to 4.

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Metadata
Title
Tin-mono-sulfide (SnS) thin films prepared by chemical spray pyrolysis with different [S]/[Sn] ratios
Authors
Thierno Sall
Miguel Mollar
Bernabé Marí
Publication date
01-11-2017
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 11/2017
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-017-1219-9

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