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Journal of Computational Electronics

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17-05-2023

Transition metal induced-magnetization in zigzag SiCNTs

Authors: Anurag Chauhan, Kapil Sharma, Sudhanshu Choudhary

Published in: Journal of Computational Electronics | Issue 4/2023

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Abstract

In this paper, we report the induced magnetization in metallic and semiconducting SiCNTs on the adsorption of transition metals. The resultant adsorbed SiCNTs structures showed half-metal-ferromagnetic and ferromagnetic behaviour verifying the induced magnetization. The spin-density of states and bandstructure have also been studied, confirming the induced magnetic behaviour. The strength of the induced ferromagnetic behaviour is varied with the various transition metals and is then related to the calculated magnetic moment in the adsorbed structure. The Cr adsorbed (8,0) SiCNT indicated strong half- metal-ferromagnetic behaviour with a magnetic moment of 5.4 \({\upmu }_{\mathrm{B}}\). Only Cu-adsorbed (6,0) metallic SiCNT showed ferromagnetic behaviour among all the simulated structures indicating the impact of transition metal on the SiCNT structures. These promising results will be helpful in designing of devices like spin-valves, MTJs, and MRAMs in the field of spintronics.

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Iijima, S.: (1991) Synthesis of carbon nanotubes. Nature 354, 56–58. References—Scientific Research Publishing. https://www.scirp.org/(S(i43dyn45teexjx455qlt3d2q))/reference/ReferencesPapers.aspx?ReferenceID=1241661. Accessed Dec. 28, 2021

Barla, P., Joshi, V.K., Bhat, S.: Spintronic devices: a promising alternative to CMOS devices. J. Comput. Electron. 20(2), 805–837 (2021). https://doi.org/10.1007/S10825-020-01648-6CrossRef

Loiseau, A., Willaime, F., Demoncy, N., Hug, G., Pascard, H.: Boron nitride nanotubes with reduced numbers of layers synthesized by arc discharge. Phys. Rev. Lett. 76(25), 4737 (1996). https://doi.org/10.1103/PhysRevLett.76.4737CrossRef

Chopra, N.G., et al.: Boron nitride nanotubes. Science 1979 269(5226), 966–967 (1995). https://doi.org/10.1126/SCIENCE.269.5226.966CrossRef

Yan, B., Zhou, G., Wu, J., Duan, W., Gu, B.L.: Bonding modes and electronic properties of single-crystalline silicon nanotubes. Phys. Rev. B Condens. Matter. Mater. Phys. (2006). https://doi.org/10.1103/PHYSREVB.73.155432CrossRef

Behzad, S., Moradian, R., Chegel, R.: Structural and electronic properties of silicon carbide nanotubes. pp 1860–1869 (2012). https://doi.org/10.1166/jctn.2012.2597

Zhao, M., Xia, Y., Li, F., Zhang, R.Q., Lee, S.T.: Strain energy and electronic structures of silicon carbide nanotubes: density functional calculations. Phys. Rev. B Condens. Matter Mater. Phys. 71(8), 1–6 (2005). https://doi.org/10.1103/PhysRevB.71.085312CrossRef

Menon, M., Richter, E., Mavrandonakis, A., Froudakis, G., Andriotis, A.N.: Structure and stability of SiC nanotubes. Phys. Rev. B Condens. Matter Mater. Phys. 69(11), 45–48 (2004). https://doi.org/10.1103/PhysRevB.69.115322CrossRef

Peng, B., Annamalai, M., Mothes, S., Schröter, M.: Device design and optimization of CNTFETs for high-frequency applications. J. Comput. Electron. 20(6), 2492–2500 (2021). https://doi.org/10.1007/S10825-021-01805-5/FIGURES/9CrossRef

10.

Larina, E.V., Chmyrev, V.I., Skorikov, V.M., D’yachkov, P.N., Makaev, D.V.: Band structure of silicon carbide nanotubes. Inorg. Mater. 44(8):823–834 (2008). https://doi.org/10.1134/S0020168508080086.

11.

Choudhary, S., Qureshi, S.: Theoretical study on effect of radial and axial deformation on electron transport properties in a semiconducting Si–C nanotube. 35(5):713–718 (2012)

12.

Choudhary, S., Chauhan, A.: First-principles study of spin transport in CrO₂–SiCNT–CrO₂ magnetic tunnel junction. J. Comput. Electron. (2015). https://doi.org/10.1007/s10825-015-0725-xCrossRef

13.

Saini, M., Choudhary, S.: Understanding the spin transport in H₂O-adsorbed CNT-based magnetic tunnel junction. J. Supercond. Nov. Magn. 32(4), 925–929 (2018). https://doi.org/10.1007/S10948-018-4783-8CrossRef

14.

Yang, C.-K., Zhao, J., Lu, J.P.: Magnetism of transition-metal/carbon-nanotube hybrid structures. (2003). https://doi.org/10.1103/PhysRevLett.90.257203.

15.

Meshginqalam, B., Alaei, S.: Transition metals adsorption and conductivity modification in carbon nanotubes: analytical modeling and DFT study. Adsorption 24(6), 575–583 (2018). https://doi.org/10.1007/S10450-018-9964-ZCrossRef

16.

Choudhary, S., Singh, N., Ranjan, P.: Journal of magnetism and magnetic materials induced magnetization in armchair and zig-zag CNTs on adsorbing transition metals. J. Magn. Magn. Mater. 538(July), 168287 (2021). https://doi.org/10.1016/j.jmmm.2021.168287CrossRef

17.

Yang, C.K., Zhao, J., Lu, J.P.: Magnetism of transition-metal/carbon-nanotube hybrid structures. Phys. Rev. Lett. 90(25), 4 (2003). https://doi.org/10.1103/PHYSREVLETT.90.257203/FIGURES/4/MEDIUMCrossRef

18.

Yang, C.-K., Zhao, J., Lu, J.P.: Complete spin polarization for a carbon nanotube with an adsorbed atomic transition-metal chain. Letters 4, 561–563 (2004). https://doi.org/10.1021/nl035104xCrossRef

19.

Cui, H., Zhang, G., Zhang, X., Tang, J.: Rh-doped MoSe₂ as a toxic gas scavenger: a first-principles study. Nanoscale Adv. 1(2), 772–780 (2019). https://doi.org/10.1039/C8NA00233ACrossRef

20.

Srivastava, A., Jain, S.K., Khare, P.S.: Ab-initio study of structural, electronic, and transport properties of zigzag GaP nanotubes. J. Mol. Model (2014). https://doi.org/10.1007/S00894-014-2171-2CrossRef

21.

Chauhan, A., Maahich, A., Pal, J.: First-principles calculations of the electronic and optical properties of WS_e2/Cd_0.9Zn_0.1Te van der Waals heterostructure. J. Comput. Electron. 20(1), 13–20 (2021). https://doi.org/10.1007/s10825-021-01659-xCrossRef

22.

Bahamon, D., Khalil, M., Belabbes, A., Alwahedi, Y., Vega, L.F., Polychronopoulou, K.: A DFT study of the adsorption energy and electronic interactions of the SO2 molecule on a CoP hydrotreating catalyst. RSC Adv. 11(5), 2947–2957 (2021). https://doi.org/10.1039/C9RA10634KCrossRef

23.

Lei, T., Pochorovski, I., Bao, Z.: Separation of semiconducting carbon nanotubes for flexible and stretchable electronics using polymer removable method. Acc. Chem. Res. 50(4), 1096–1104 (2017). https://doi.org/10.1021/ACS.ACCOUNTS.7B00062CrossRef

24.

Du, T., Getty, S.A., Cobas, E., Fuhrer, M.S.: Extraordinary mobility in semiconducting carbon nanotubes. (2004) https://doi.org/10.1021/nl034841q.

Title: Transition metal induced-magnetization in zigzag SiCNTs
Authors: Anurag Chauhan
Kapil Sharma
Sudhanshu Choudhary
Publication date: 17-05-2023
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 4/2023
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02030-y

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Transition metal induced-magnetization in zigzag SiCNTs

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Abstract

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Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

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