Tuning of intrinsic defects in ZnO ceramics by (Bi, N) doping and their effect on dielectric properties

This article delves into the synthesis and characterization of (Bi, N) co-doped ZnO ceramics, focusing on their structural, optical, and dielectric properties. The study employs the sol-gel method to create these ceramics, highlighting the advantages of this technique in controlling microstructure and material properties. Key findings include the reduction of crystallite size with increasing dopant concentrations, as revealed by X-ray diffraction analysis. The article also explores the impact of doping on intrinsic defects such as zinc interstitials and oxygen vacancies, using Raman and photoluminescence spectroscopy. The dielectric properties of the ceramics are extensively studied, showing a decrease in dielectric constant and loss with increasing frequency and dopant levels. The temperature-dependent dielectric properties are also investigated, revealing complex behavior that is rationalized through the Maxwell-Wagner model. Impedance spectroscopy further elucidates the electrical properties, indicating non-Debye relaxation and the dominance of grain boundary contributions. The article concludes by discussing the implications of these findings for the potential applications of (Bi, N) co-doped ZnO ceramics in advanced electronic devices.