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Journal of Materials Science: Materials in Electronics

Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

  • 01-05-2023
Published in:
Authors
Hang Zhou
Guanghui Zhang
Binghuang Duan
Yang Liu
Published in
Journal of Materials Science: Materials in Electronics | Issue 13/2023

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Abstract

The study investigates the degradation of GLPNP bipolar transistors due to ionizing radiation, focusing on the unexpected observation of two optimum temperatures during elevated temperature irradiation. Traditional models attribute this to the competition between generation and annealing of interface traps, but the authors propose a more complex mechanism involving two pairs of competing reactions. The findings have significant implications for understanding the reliability of semiconductor devices in space environments and the accuracy of accelerated testing methods.
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previous article The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures
next article (Zn,Mn)S/C composites for high-capacity lithium storage
Title
Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors
Authors
Hang Zhou
Guanghui Zhang
Binghuang Duan
Yang Liu
Publication date
01-05-2023
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 13/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-10534-3
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