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Journal of Computational Electronics

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21-10-2024

UTC-PD's optoelectronic mixing principle and optimal working condition

Authors: Jihong Ye, Yongqing Huang, Mingxi Yang, Shuhu Tan, Xuejie Wang

Published in: Journal of Computational Electronics | Issue 6/2024

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Abstract

In this article, we illustrate the working principle of optoelectronic mixing for uni-traveling-carrier photodetector (UTC-PD). As a result of the combined influence of local oscillators (LO) and bias modulation signals (RF), the velocity and concentration of photogenerated electrons in the depletion region exhibit mixing components with frequencies of $|{f}_{LO}\pm {f}_{RF}|$. The optoelectronic mixing signal is primarily generated by these two components, and its peak value is determined by the concentration of photogenerated electron. Moreover, the cliff layer can greatly enhance the output power of the mixed frequency signal, since it allows more photogenerated electrons to be transmitted to the depletion region.

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Title: UTC-PD's optoelectronic mixing principle and optimal working condition
Authors: Jihong Ye
Yongqing Huang
Mingxi Yang
Shuhu Tan
Xuejie Wang
Publication date: 21-10-2024
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 6/2024
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-024-02235-9

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UTC-PD's optoelectronic mixing principle and optimal working condition

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Abstract

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Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application

Chaotic computing cell based on nanostructured phase-change materials

Dual injection enhanced super junction TIGBT with narrow mesa and floating-P region

A nanoelectromechanical energy-reversible switch: theoretical study and verification by experiment of its applicability to adiabatic computing

Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study

On efficient modeling of drain current for designing high-power GaN HEMT-based circuits