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Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation Read chapter Read first chapter

2007 | OriginalPaper | Chapter

Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs

Authors : E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue, K. Taniguchi

Published in: Simulation of Semiconductor Processes and Devices 2007

Publisher: Springer Vienna

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We have developed a system consisting of a full-3D process simulator for stress calculation and k · p band calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMOSFETs of 65nm technology devices. This system is a powerful tool to optimize device structures with all stress components.

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previous chapter Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
next chapter Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
Metadata
Title
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
Authors
E. Tsukuda
Y. Kamakura
H. Takashino
T. Okagaki
T. Uchida
T. Hayashi
M. Tanizawa
K. Eikyu
S. Wakahara
K. Ishikawa
O. Tsuchiya
Y. Inoue
K. Taniguchi
Copyright Year
2007
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2007

Print ISBN: 978-3-211-72860-4

Electronic ISBN: 978-3-211-72861-1

Copyright Year: 2007

DOI
https://doi.org/10.1007/978-3-211-72861-1_7