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Journal of Materials Science

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04-02-2021 | Electronic materials

Van der waals BP/InSe heterojunction for tunneling field-effect transistors

Authors: Hong Li, Qida Wang, Peipei Xu, Jing Lu

Published in: Journal of Materials Science | Issue 14/2021

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Abstract

Introducing heterogeneous architecture is a prospective way to improve tunneling field-effect transistors (TFETs). We investigate the van der Waals (vdW) heterojunction based on monolayer black phosphorene and indium selenide (BP/InSe heterojunction) and the double-gated 10-nm TFETs based on the vdW BP/InSe heterojunction with the contact length and position by using the ab-initio quantum transport simulations. The vdW BP/InSe heterojunction shows a type-II band edge alignment. The optimal vdW BP/InSe heterojunction TFETs have a 1-nm-length BP/InSe heterojunction at the channel’s left and right sites (1L and 1R for short). Novelty, the BP/InSe heterojunction TFETs with 1L and 1R configurations are n- and p-type devices, respectively, and corresponding high on-currents of 240 and 408 μA/μm are obtained for high-performance application (off-current: 0.1 μA/μm) at a very low supply voltage (0.3 V).

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Title: Van der waals BP/InSe heterojunction for tunneling field-effect transistors
Authors: Hong Li
Qida Wang
Peipei Xu
Jing Lu
Publication date: 04-02-2021
Publisher: Springer US
Published in: Journal of Materials Science / Issue 14/2021
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-021-05784-7

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